NPN transistor HL Haolin Elec 2SD667 B for in low frequency power amplifier and electronic applications

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Product Description

Product Overview

The 2SD667 B is an NPN transistor designed for low-frequency power amplifier applications. It serves as a complementary pair with the 2SB647, offering versatile integration in electronic circuits.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic-Encapsulate Transistors
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=10A,IE=0			120	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0			80	V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A,IC=0			5	V
Collector cut-off current	ICBO	VCB=100V,IE=0			10	A
Emitter cut-off current	IEBO	VEB=4V,IC=0			10	A
DC current gain	hFE(1)	VCE=5V,IC=150mA	60		320
DC current gain	hFE(2)	VCE=5V,IC=500mA	30
Collector-emitter saturation voltage	VCE(sat)	IC=500mA,IB=50mA			1	V
Base-emitter voltage	VBE	VCE=5V,IC=150mA		1.5		V
Transition frequency	fT	VCE=5V,IC=150mA		140		MHz
Collector output capacitance	Cob	VCB=10V,IE=0,f=1MHz		12		pF

Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	120	V
Collector-Emitter Voltage	VCEO	80	V
Emitter-Base Voltage	VEBO	5	V
Collector Current -Continuous	IC	1	A
Collector Power Dissipation	PC	900	mW
Junction Temperature	TJ	150
Storage Temperature	Tstg	-55-150