10 amp 600 volt N channel MOSFET Hangzhou Silan Microelectronics SVF10N60F optimized for switching in power conversion
Price:
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SVF10N60F/S/K is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. This advanced design offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Origin: China
- Certifications: Pb free, Halogen free (depending on part number)
Technical Specifications
| Part Number | Package | Rating | RDS(on)(typ.)@VGS=10V | VDS | ID@TC=25C | PD@TC=25C | EAS |
| SVF10N60F | TO-220F-3L | 10A, 600V | 0.75 | 600V | 10A | 150W | 654mJ |
| SVF10N60S | TO-263-2L | 10A, 600V | 0.75 | 600V | 10A | 148W | 654mJ |
| SVF10N60K | TO-262-3L | 10A, 600V | 0.75 | 600V | 10A | 148W | 654mJ |
| Characteristic | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 600 | -- | -- | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain-Source On State Resistance | RDS(on) | VGS=10V, ID=5.0A | -- | 0.75 | 0.9 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | -- | 1086 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | -- | 143 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | -- | 12.0 | -- | pF |
| Total Gate Charge | Qg | VDS=480V, ID=10A, VGS=10V | -- | 28.3 | -- | nC |
| Diode Forward Voltage | VSD | IS=10A,VGS=0V | -- | -- | 1.3 | V |
| Reverse Recovery Time | Trr | IS=10A,VGS=0V, dIF/dt=100A/S | -- | 542 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=10A,VGS=0V, dIF/dt=100A/S | -- | 4.18 | -- | C |
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