Dual N Channel 100V Fast Switching MOSFET HUASHUO HSM0228 with Low Gate Charge and Trench Technology
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HSM0228 is a dual N-channel, 100V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: Dual N-Channel MOSFET
- Voltage Rating: 100V
- Switching Speed: Fast Switching
- Technology: Trench Technology
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM0228 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 100 | --- | --- | V |
| BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.122 | --- | V/ | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=4A | --- | --- | 68 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=3A | --- | --- | 94 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V | |
| VGS(th) Temperature Coefficient | --- | --- | -4.84 | --- | mV/ | |
| Drain-Source Leakage Current (IDSS) | VDS=80V , VGS=0V , TJ=25 | --- | --- | 10 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=80V , VGS=0V , TJ=55 | --- | --- | 100 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=4A | --- | 14 | --- | S | |
| Total Gate Charge (Qg) (10V) | VDS=50V , VGS=10V , ID=4A | --- | 12 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | --- | 2.7 | --- | nC | |
| Gate-Drain Charge (Qgd) | --- | --- | 1.7 | --- | nC | |
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 2.5 | A | |
| Pulsed Source Current (ISM) | --- | --- | --- | 25 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V | |
| HSM0228 | Continuous Drain Current (ID@TA=25) | VGS @ 10V | --- | --- | 4 | A |
| Continuous Drain Current (ID@TA=70) | VGS @ 10V | --- | --- | 3 | A | |
| Pulsed Drain Current (IDM) | --- | --- | --- | 25 | A | |
| Total Power Dissipation (PD@TA=25) | --- | --- | --- | 1.5 | W | |
| Thermal Resistance Junction-ambient (RJA) | --- | --- | --- | 90 | /W | |
| HSM0228 | Thermal Resistance Junction-Case (RJC) | --- | --- | --- | 40 | /W |
| Storage Temperature Range (TSTG) | --- | -55 | --- | 150 | ||
| HSM0228 | Operating Junction Temperature Range (TJ) | --- | -55 | --- | 150 |
| Parameter | Conditions | Typ. | Max. | Units |
|---|---|---|---|---|
| Input Capacitance (Ciss) | VDS=25V , VGS=0V , f=1MHz | 620 | --- | pF |
| Output Capacitance (Coss) | --- | 105 | --- | pF |
| Reverse Transfer Capacitance (Crss) | --- | 63 | --- | pF |
| Turn-On Delay Time (Td(on)) | VDD=50V , VGS=10V , RG=3 , ID=4A | 3.8 | --- | ns |
| Rise Time (Tr) | --- | 26 | --- | ns |
| Turn-Off Delay Time (Td(off)) | --- | 16 | --- | ns |
| Fall Time (Tf) | --- | 8.8 | --- | ns |
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSM0228 | SOP-8 | Tape&Reel | 2500 |
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Contact Person
Sellina