High Current Handling N Channel MOSFET Guangdong Hottech HKTD80N03 with 170 Amp Pulsed Drain Current
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Product Description
Product Overview
The HKTD80N03 is a N-CHANNEL Power MOSFET designed for high-performance applications. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. This MOSFET is suitable for various power management tasks requiring efficient switching and low conduction losses.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Model: HKTD80N03
- Origin: China
- Material: Molded Plastic (Case)
- Certifications: UL flammability 94V-0
- Email: hkt@heketai.com
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Maximum Ratings | VDS | 30 | V | |||
| VGS | 20 | V | ||||
| ID | 80 | A | ||||
| IDM | 170 | A | Note 1 | |||
| PD | 2.5 | W | ||||
| RJC | 6 | C/W | ||||
| Electrical Characteristics (Off) | V(BR)DS | 30 | V | VGS=0V,ID=250A | ||
| IDSS | 1 | uA | VDS=30V, VGS=0V | |||
| IGSS | 100 | nA | VDS=0V, VGS=20V | |||
| Electrical Characteristics (On) | VGS(th) | 1.0 | 1.5 | 2.5 | V | VDS=VGS, ID=250A |
| RDS(ON) | 4.8 | 6 | m | VGS=10V, ID=30A | ||
| Dynamic Characteristics | Ciss | 2330 | pF | VGS=0V VDS=20V f=1.0MHz | ||
| Coss | 460 | pF | ||||
| Crss | 230 | pF | ||||
| Switching Characteristics | td(on) | 55 | ns | VDD=20V ID=20A RG=3 | ||
| tr | 36 | ns | ||||
| td(off) | 37 | ns | ||||
| tf | 14 | ns | ||||
| Gate Charge | Qg | 51 | nC | VGS=10V | ||
| Qgs | 14 | nC | ||||
| Qgd | 11 | nC | ||||
| Diode Characteristics | VSD | 1.2 | V | IS=24A,VGS=0V | ||
| ISM | 170 | A | Pulsed |
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Sellina