Power mosfet Guangdong Hottech IRLML6302 P channel type with low profile and molded plastic housing

Name: Power mosfet Guangdong Hottech IRLML6302 P channel type with low profile and molded plastic housing
Brand: Hefei Purple Horn E-Commerce Co., Ltd.

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Product Description

IRLML6302 P-Channel Power MOSFET

The IRLML6302 is a P-Channel Power MOSFET featuring GenerationV technology, offering ultra-low on-resistance and a low profile (

Product Attributes

Case Material: Molded Plastic
Flammability Classification Rating: 94V-0
Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Marking: 1C7A

Technical Specifications

Parameter	Conditions	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
Continuous Drain Current, ID @ TA = 25C (VGS @ -4.5V)				-0.78	A
Continuous Drain Current, ID @ TA = 70C (VGS @ -4.5V)				-0.62	A
Pulsed Drain Current, IDM				-4.9	A
Power Dissipation, PD @ TA = 25C				540	mW
Linear Derating Factor			4.3		mW/C
Gate-to-Source Voltage, VGS				±12	V
Peak Diode Recovery dv/dt			-5.0		V/ns
Junction and Storage Temperature Range, TJ, TSTG		-55		+150	C
Maximum Junction-to-Ambient, RJA				230	C/W
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Drain-to-Source Breakdown Voltage, V(BR)DSS	VGS = 0V, ID = -250A	-20			V
Breakdown Voltage Temp. Coefficient, V(BR)DSS/TJ	Reference to 25C, ID = -1mA		-4.9		mV/C
Static Drain-to-Source On-Resistance, RDS(ON)	VGS = -4.5V, ID = -0.61A			0.60	Ω
Static Drain-to-Source On-Resistance, RDS(ON)	VGS = -2.7V, ID = -0.31A			0.90	Ω
Gate Threshold Voltage, VGS(th)	VDS = VGS, ID = -250A	-0.70		-1.5	V
Forward Transconductance, gfs	VDS = -10V, ID = -0.31A	0.56			S
Drain-to-Source Leakage Current, IDSS	VDS = -16V, VGS = 0V			-1.0	µA
Drain-to-Source Leakage Current, IDSS	VDS = -16V, VGS = 0V, TJ = 125C			-25	µA
Gate-to-Source Forward Leakage, IGSS	VGS = -12V			-100	nA
Gate-to-Source Reverse Leakage	VGS = 12V			100
Total Gate Charge, Qg	ID = -0.61A, VDS = -16V, VGS = -4.5V		2.4	3.6	nC
Gate-to-Source Charge, Qgs			0.56	0.84
Gate-to-Drain ("Miller") Charge, Qgd			1.0	1.5
Turn-On Delay Time, td(on)	VDD = -10V, ID = -0.61A, RG = 6.2Ω, RD = 16Ω		13		ns
Rise Time, tr			18		ns
Turn-Off Delay Time, td(off)			22		ns
Fall Time, tf			22		ns
Input Capacitance, Ciss	VGS = 0V, VDS = -15V, = 1.0MHz		97		pF
Output Capacitance, Coss			53		pF
Reverse Transfer Capacitance, Crss			28		pF
Source-Drain Ratings and Characteristics
Continuous Source Current (Body Diode), IS				-0.54	A
Pulsed Source Current (Body Diode), ISM				-4.9	A
Diode Forward Voltage, VSD	TJ = 25C, IS = -0.61A, VGS = 0V			-1.2	V
Reverse Recovery Time, trr	TJ = 25C, IF = -0.61A, di/dt = 100A/µs		35	53	ns
Reverse Recovery Charge, Qrr	TJ = 25C, IF = -0.61A, di/dt = 100A/µs		26	39	nC