NPN Transistor SOT89 3L Package Featuring High Diode PXT8050 Suitable for Electronic Applications

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Product Description

Product Overview

The PXT8050 is an NPN transistor in a SOT-89-3L plastic-encapsulated package. It serves as a compliment to the PXT8550 and is designed for various electronic applications requiring reliable transistor performance. Key features include a continuous collector current of 1.5A and a collector power dissipation of 0.5W.

Product Attributes

Brand: HIGH DIODE SEMICONDUCTOR
Package Type: SOT-89-3L
Transistor Type: NPN
Marking: Y1 (Solid dot = Green molding compound device)

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				5	V
Collector Current -Continuous	IC				1.5	A
Collector Power dissipation	PC	(Ta=25 unless otherwise noted)			0.5	W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		150
Thermal Resistance From Junction To Ambient	RJA			250	/W
Collector-base breakdown voltage	V(BR)CBO	IC=100uA, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=0.1mA, IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	5			V
Collector cut-off current	ICBO	VCB=40V, IE=0			0.1	A
Emitter cut-off current	ICEO	VCE=20V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=5V, IC=0			0.1	A
DC current gain	hFE(1)	VCE=1V, IC=100mA	200		350
DC current gain	hFE(2)	VCE=1V, IC=800mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=800mA, IB=80mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800mA, IB=80mA			1.2	V
Base-emitter voltage	VBE	VCE=1V, IC=10mA		1		V
Base-emitter positive favor voltage	VBEF	IB=1A			1.55	V
Transition frequency	fT	VCE=10V,IC=50mA,f=30MHz		100		MHz
Output capacitance	Cob	VCB=10V,IE=0,f=1MHz			15	pF