Switching transistor High Diode MMBT4401 semiconductor NPN type in compact SOT23 package for general

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Product Description

Product Overview

The MMBT4401 is a high diode semiconductor NPN switching transistor in a SOT-23 package. It is designed for general-purpose switching applications.

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0			60	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0			40	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A ,IC=0			6	V
Collector cut-off current	ICBO	VCB=50V,IE=0			0.1	A
Collector cut-off current	ICEX	VCE=35V, VEB=0.4V			0.1	A
Emitter cut-off current	IEBO	VEB=5V,IC=0			0.1	A
DC current gain	hFE1	VCE=1V, IC=0.1mA	20
	hFE2	VCE=1V, IC=1mA	40
	hFE3	VCE=1V, IC=10mA	80
	hFE4	VCE=1V, IC=150mA	100		300
	hFE5	VCE=2V, IC=500mA		40
Collector-emitter saturation voltage	VCE(sat)	IC=150mA,IB=15mA		0.4		V
Collector-emitter saturation voltage	VCE(sat)	IC=500mA,IB=50mA		0.75		V
Base-emitter saturation voltage	VBE(sat	IC=150mA,IB=15mA		0.95		V
Base-emitter saturation voltage	VBE(sat	IC=500mA,IB=50mA		1.2		V
Transition frequency	fT	VCE=10V, IC=20mA,f =100MHz		250		MHz
Delay time	td	VCC=30V, VBE(off)=-2V IC=150mA , IB1=15mA		15		ns
Rise time	tr			20		ns
Storage time	ts	VCC=30V, IC=150mA IB1=IB2=15mA		225		ns
Fall time	tf			60		ns
Collector Power Dissipation	PC				300	mW
Thermal Resistance Junction To Ambient	RJA			417		/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150