Electronic PNP Transistor High Diode MMBT3906 in SOT23 Package with Epitaxial Planar Die Construction

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Product Description

Product Overview

The MMBT3906 is a PNP epitaxial planar die construction transistor in a SOT-23 package. It serves as a complementary type to the NPN transistor MMBT3904, offering a high diode semiconductor solution for various electronic applications.

Product Attributes

Brand: High Diode Semiconductor
Package: SOT-23
Construction: Epitaxial planar die
Type: PNP Transistor
Classification: 2A SOT-23 Plastic-Encapsulate Transistors

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	MAX	UNIT
Collector-Base Voltage	V		-40		V
Collector-Emitter Voltage	VCEO		-40		V
Emitter-Base Voltage	VEBO		-5		V
Collector Current	IC		-200		mA
Collector Power Dissipation	PC		200		mW
Thermal Resistance Junction To Ambient	RJA		625		/W
Junction Temperature	Tj		150
Storage Temperature	Tstg		-55+150
Collector-base breakdown voltage	V(BR)CBO	IC=-10A, IE=0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -1mA, IB=0	-40		V
Emitter-base breakdown voltage	V(BR)EBO	IE= -10A, IC=0	-5		V
Collector cut-off current	ICBO	VCB= -40 V, IE=0		-100	nA
Collector cut-off current	ICEX	VCE=-30V, VBE(off)=-3V		-50	nA
Emitter cut-off current	IEBO	VEB= -5V, IC=0		-100	nA
DC current gain	hFE1	VCE=-1V, IC= -10mA	100	300
DC current gain	hFE2	VCE= -1V, IC=-50mA	60
DC current gain	hFE3	VCE= -1V, IC=-100mA	30
Collector-emitter saturation voltage	VCE(sat)1	IC=-50mA, IB=-5mA		-0.3	V
Base-emitter saturation voltage	VBE(sat)	IC= -50mA, IB=-5mA		-0.95	V
Transition frequency	fT	VCE=-20V,IC=-10mA,f=100MHz	300		MHz
Delay Time	td	VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA		35	nS
Rise Time	tr	VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA		35	nS
Storage Time	ts	VCC=-3V,IC=-10mA IB1=IB2=-1mA		225	nS
Fall Time	tf	VCC=-3V,IC=-10mA IB1=IB2=-1mA		75	nS
HFE RANK			100-300
HFE RANGE	L	100200
HFE RANGE	H	200300