Compact SOT23 High Diode S8050 Transistor Offering Stable Electrical Characteristics for Electronics

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Product Description

Product Overview

The S8050 is a high-performance NPN bipolar transistor from High Diode Semiconductor, designed for general-purpose applications. Packaged in a compact SOT-23, it offers excellent characteristics for various electronic circuits.

Product Attributes

Brand: High Diode Semiconductor
Complimentary to: S8550
Package: SOT-23

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
V_CBO	Collector-Base Voltage	I_C= 100A, I_E=0			40	V
V_CEO	Collector-Emitter Voltage	I_C=1mA, I_B=0			25	V
V_EBO	Emitter-Base Voltage	I_E=100A, I_C=0			5	V
I_C	Collector Current				500	mA
P_C	Collector Power Dissipation				300	mW
R_JA	Thermal Resistance From Junction To Ambient			417	/W
T_j	Junction Temperature				150
T_stg	Storage Temperature		-55		+150
V_(BR)CBO	Collector-base breakdown voltage	I_C= 100A, I_E=0	40			V
V_(BR)CEO	Collector-emitter breakdown voltage	I_C=1mA, I_B=0	25			V
V_(BR)EBO	Emitter-base breakdown voltage	I_E=100A, I_C=0	5			V
I_CBO	Collector cut-off current	V_CB=40 V , I_E=0			0.1	A
I_CEO	Collector cut-off current	V_CB=20V , I_E=0			0.1	A
I_EBO	Emitter cut-off current	V_EB= 5V , I_C=0			0.1	A
h_FE(1)	DC current gain	V_CE=1V, I_C= 50mA	120		400
h_FE(2)	DC current gain	V_CE=1V, I_C= 500mA	50
V_CE(sat)	Collector-emitter saturation voltage	I_C=500 mA, I_B= 50mA			0.6	V
V_BE(sat)	Base-emitter saturation voltage	I_C=500 mA, I_B= 50mA			1.2	V
f_T	Transition frequency	V_CE=6V, I_C= 20mA, f=30MHz		150		MHz