Medium power transistor High Diode MMBT5401 NPN type in SOT23 package for switching and amplification

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Product Description

Product Overview

The MMBT5401 is a high diode semiconductor transistor in a SOT-23 package. It is ideal for medium power amplification and switching applications. This NPN transistor is complementary to the MMBT5551.

Product Attributes

Brand: High Diode Semiconductor
Package Type: SOT-23
Transistor Type: NPN
Classification: Plastic-Encapsulate Transistors
Complementary to: MMBT5551

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VCEO	Collector-Emitter Voltage				-150	V
VEBO	Emitter-Base Voltage				-5	V
IC	Collector Current				-600	mA
PC	Collector Power Dissipation				300	mW
RJA	Thermal Resistance From Junction To Ambient			416	/W
Tj	Junction Temperature				150
Tstg	Storage Temperature		-55		+150
V(BR)CBO	Collector-base breakdown voltage	IC=-100A, IE=0	-160			V
V(BR)CEO	Collector-emitter breakdown voltage	IC=-1mA, IB=0	-150			V
V(BR)EBO	Emitter-base breakdown voltage	IE=-10A, IC=0	-5			V
ICBO	Collector cut-off current	VCB=-120V, IE=0		-0.1		A
IEBO	Emitter cut-off current	VEB=-4V, IC=0		-0.1		A
hFE(1)	DC current gain	VCE=-5V, IC=-1mA	80
hFE(2)	DC current gain	VCE=-5V, IC=-10mA		100	300
hFE(3)	DC current gain	VCE=-5V, IC=-50mA	50
VCE(sat)1	Collector-emitter saturation voltage	IC=-10mA, IB=-1mA		-0.2		V
VCE(sat)2	Collector-emitter saturation voltage	IC=-50mA, IB=-5mA		-0.5		V
VBE(sat)1	Base-emitter saturation voltage	IC=-10mA, IB=-1mA		-1		V
VBE(sat)2	Base-emitter saturation voltage	IC=-50mA, IB=-5mA		-1		V
fT	Transition frequency	VCE=-5V,IC=-10mA, f=30MHz		100		MHz