semiconductor transistor High Diode S9013 NPN transistor with high collector current in SOT23 package

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Product Description

Product Overview

The S9013 is a high diode semiconductor transistor in a SOT-23 package. It features high collector current, complementary to the S9012, and excellent hFE linearity. This NPN transistor is suitable for general-purpose applications requiring high collector current.

Product Attributes

Brand: High Diode Semiconductor
Package: SOT-23 Plastic-Encapsulate Transistors
Type: NPN Transistor
Complementary to: S9012

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	V	40				V
Collector-Emitter Voltage	VCEO	25				V
Emitter-Base Voltage	VEBO	5				V
Collector Current	IC	500				mA
Collector Power Dissipation	PC	300				mW
Thermal Resistance Junction To Ambient	RJA	416				/W
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55+150
Collector-base breakdown voltage	V(BR)CBO	IC=0.1mA, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=0.1mA, IC=0	5			V
Collector cut-off current	ICBO	VCB=40V, IE=0		0.1		uA
Collector cut-off current	ICEO	VCE=20V, IB=0		0.1		uA
Emitter cut-off current	IEBO	VEB=5V, IC=0		0.1		uA
DC current gain (hFE(1))	hFE	VCE=1V, IC=50mA	120		400
DC current gain (hFE(2))	hFE	VCE=1V, IC=500mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=500mA, IB=50mA			0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA, IB=50mA			1.2	V
Base-emitter voltage	VBE	VCB=1V,IC=10mA		0.7		V
Transition frequency	fT	VCE=6V,IC=20mA, f=30MHz		150		MHz
Collector output capacitance	Cob	VCB=6V, IE=0, f=1MHz			8	pF