general purpose transistor High Diode BC817 with high collector current and low saturation voltage

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Product Description

Product Overview

The BC817 is a general-purpose NPN transistor designed for AF applications. It features high collector current, high current gain, and low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP).

Product Attributes

Brand: High Diode Semiconductor
Package: SOT-23
Material: Plastic-Encapsulate Transistors
Complementary Type: BC807 (PNP)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	VCBO	IC= 10A, IE=0			50	V
Collector-emitter breakdown voltage	VCEO	IC= 10mA, IB=0			45	V
Emitter-base breakdown voltage	VEBO	IE= 1A, IC=0			5	V
Collector cut-off current	ICBO	VCB= 45 V , IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=4V, IC=0			0.1	A
DC current gain	hFE(1)	VCE=1V, IC= 100mA	100		600
DC current gain	hFE(2)	VCE=1V, IC= 500mA	40
Collector-emitter saturation voltage	VCE(sat)	IC= 500mA, IB= 50mA			0.7	V
Base-emitter saturation voltage	VBE(sat)	IC= 500mA, IB= 50mA			1.2	V
Base-emitter voltage	VBE	VCE= 1 V, IC= 500mA			1.2	V
Collector capacitance	Cob	VCB=10V ,f=1MHz			10	pF
Transition frequency	fT	VCE= 5 V, IC= 10mA f=100MHz			100	MHz
Collector Power Dissipation	PC				300	mW
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150