SOT23 packaged transistor High Diode MMBT5551 NPN type for medium power amplification and switching

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Product Description

MMBT5551 Transistor - NPN, SOT-23

The MMBT5551 is a high-performance NPN transistor in a SOT-23 package, designed for medium power amplification and switching applications. Its complementary to MMBT5401, offering reliable performance for various electronic circuits.

Product Attributes

Brand: High Diode Semiconductor
Package: SOT-23
Classification: Plastic-Encapsulate Transistors
Transistor Type: NPN

Technical Specifications

nA nA pF

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	V				180	V
Collector-Emitter Voltage	VCEO				160	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				600	mA
Collector Power Dissipation	PC				300	mW
Thermal Resistance Junction To Ambient	RJA				416	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	180			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	160			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0	6			V
Collector cut-off current	ICBO	VCB=120V, IE=0			50
Emitter cut-off current	IEBO	VEB=4V, IC=0			50
DC current gain (hFE(1))	hFE	VCE=5V, IC=1mA	80
DC current gain (hFE(2))	hFE	VCE=5V, IC=10mA		100	300
DC current gain (hFE(3))	hFE	VCE=5V, IC=50mA		50
Collector-emitter saturation voltage (VCE(sat)1)	VCE(sat)	IC=10mA, IB=1mA		0.15		V
Collector-emitter saturation voltage (VCE(sat)2)	VCE(sat)	IC=50mA, IB=5mA		0.2		V
Base-emitter saturation voltage (VBE(sat)1)	VBE(sat)	IC=10mA, IB=1mA		1		V
Base-emitter saturation voltage (VBE(sat)2)	VBE(sat)	IC=50mA, IB=5mA		1		V
Transition frequency	fT	VCE=10V,IC=10mA, f=100MHz		100	300	MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz			6