electronic component High Diode MMBTA42 NPN transistor with high breakdown voltage and low saturation voltage

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Product Description

Product Overview

The MMBTA42 is a high-performance NPN transistor in a SOT-23 package, designed for applications requiring high breakdown voltage and low collector-emitter saturation voltage. It serves as a complementary device to the MMBTA92 (PNP). Its robust design and electrical characteristics make it suitable for various electronic circuits.

Product Attributes

Brand: High Diode Semiconductor
Package: SOT-23
Type: NPN Transistor
Complementary to: MMBTA92 (PNP)

Technical Specifications

Symbol	Parameter	Value	Unit	Test Conditions
VCEO	Collector-Emitter Voltage	300	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current	300	mA
PC	Collector Power Dissipation	350	mW
RJA	Thermal Resistance From Junction To Ambient	357	/W
Tj	Junction Temperature	150
Tstg	Storage Temperature	-55+150
V(BR)CBO	Collector-base breakdown voltage	300	V	IC= 100A,IE=0
V(BR)CEO	Collector-emitter breakdown voltage	300	V	IC= 1mA, IB=0
V(BR)EBO	Emitter-base breakdown voltage	5	V	IE= 100A, IC=0
ICBO	Collector cut-off current	0.25	A	VCB=200V, IE=0
IEBO	Emitter cut-off current	0.1	A	VEB= 5V, IC=0
hFE	DC current gain	60		VCE= 10V, IC= 1mA
		100-200		VCE= 10V, IC=10mA
		60		VCE=10V, IC=30mA
VCE(sat)	Collector-emitter saturation voltage	0.2	V	IC=20mA, IB= 2mA
VBE(sat)	Base-emitter saturation voltage	0.9	V	IC= 20mA, IB=2mA
fT	Transition frequency	50	MHz	VCE= 20V, IC= 10mA, f=30MHz