HL Haolin Elec A94 PNP bipolar junction transistor with TO-92 package delivering voltage performance

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Product Description

Product Overview

The A94 is a PNP bipolar junction transistor (BJT) housed in a TO-92 package. It features high breakdown voltage, making it suitable for various electronic applications requiring reliable voltage handling.

Product Attributes

Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
Origin: China
Package: TO-92 Plastic-Encapsulate
Transistor Type: PNP

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=-100A,IE=0			-400	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-1mA,IB=0			-400	V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A,IC=0			-5	V
Collector cut-off current	ICBO	VCB=-400V,IE=0		-0.1		A
Collector cut-off current	ICEO	VCE=-400V,IB=0		-5		A
Emitter cut-off current	IEBO	VEB=-4V,IC=0		-0.1		A
DC current gain	hFE(1)	VCE=-10V, IC=-10mA	80		300
	hFE(2)	VCE=-10V, IC=-1mA	70
	hFE(3)	VCE=-10V, IC=-100mA	60
	hFE(4)	VCE=-10V, IC=-50mA	80
Collector-emitter saturation voltage	VCE(sat)(1)	IC=-10mA,IB=-1mA		-0.2		V
Collector-emitter saturation voltage	VCE(sat)(2)	IC=-50mA,IB=-5mA		-0.3		V
Base-emitter saturation voltage	VBE(sat)	IC=-10mA,IB=-1mA		-0.75		V
Transition frequency	fT	VCE=-20V, IC=-10mA,f=30MHz		50		MHz
Collector-Base Voltage	VCBO				-400	V
Collector-Emitter Voltage	VCEO				-400	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current-Continuous	IC				-0.2	A
Collector Power Dissipation	PC				625	mW
Thermal Resistance from Junction to Ambient	RJA				200	/W
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		+150
Collector Current -Pulsed	ICM				-0.3	A