Semiconductor PNP Transistor With High Diode S9012 Offering High Collector Current And SOT23 Package

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Product Description

Product Overview

The S9012 is a high diode semiconductor transistor in a SOT-23 package. It is a PNP type transistor with high collector current capability and excellent hFE linearity. It is complementary to the S9013 transistor.

Product Attributes

Brand: High Diode Semiconductor
Package Type: SOT-23
Transistor Type: PNP
Features: High Collector Current, Complementary to S9013, Excellent hFE Linearity

Technical Specifications

Symbol	Parameter	Value	Unit	Test Conditions	Min	Typ	Max
VCEO	Collector-Emitter Voltage	-25	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current	-500	mA
PC	Collector Power Dissipation	300	mW
RJA	Thermal Resistance From Junction To Ambient	416	/W
Tj	Junction Temperature	150
Tstg	Storage Temperature	-55+150
V(BR)CBO	Collector-base breakdown voltage	-40	V	IC=-0.1mA, IE=0	-40
V(BR)CEO	Collector-emitter breakdown voltage	-25	V	IC=-1mA, IB=0	-25
V(BR)EBO	Emitter-base breakdown voltage	-5	V	IE=-0.1mA, IC=0	-5
ICBO	Collector cut-off current	-0.1	uA	VCB=-40V, IE=0			-0.1
ICEO	Collector cut-off current	-0.1	uA	VCE=-20V, IB=0			-0.1
IEBO	Emitter cut-off current	-0.1	uA	VEB=-5V, IC=0			-0.1
hFE	DC current gain			VCE=-1V, IC=-50mA	120		400
				RANK L (120-200)
				RANK H (200-350)
VCE(sat)	Collector-emitter saturation voltage		V	IC=-500mA, IB=-50mA			-0.6
VBE(sat)	Base-emitter saturation voltage		V	IC=-500mA, IB=-50mA			-1.2
fT	Transition frequency	150	MHz	VCE=-6V,IC=-20mA, f=30MHz		150
Cob	Collector output capacitance	5	pF	VCB=-10V, IE=0, f=1MHz			5