PNP Transistor SOT23 Package High Diode BC856B Suitable for Switching and AF Amplifier Applications

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The BC856-8 series are PNP bipolar transistors in a SOT-23 plastic-encapsulated package. Ideally suited for automatic insertion, these transistors are designed for switching and AF amplifier applications. They offer high diode semiconductor performance.

Product Attributes

Brand: High Diode Semiconductor
Package: SOT-23
Type: PNP Transistor

Technical Specifications

Item	Symbol	Unit	Conditions	BC856	BC857	BC858	Value
Collector-Base Voltage	VCBO	V	IC= -10A, IE=0	-80	-50	-30
Collector-Emitter Voltage	VCEO	V	IC= -10mA, IB=0	-65	-45	-30
Emitter-Base Voltage	VEBO	V	IE= -1A, IC=0	-5
Collector Current	IC	A		-0.1
Total Device Dissipation	PC	W		0.2
Junction Temperature	Tj			150
Storage Temperature	TSTG			-55 to +150
Thermal Resistance Junction To Ambient	RJA	/W		625
Collector cut-off current	ICBO	A	VCB= -70 V , IE=0	-0.1
Collector cut-off current	ICBO	A	VCB= -45 V , IE=0		-0.1
Collector cut-off current	ICBO	A	VCB= -25 V , IE=0			-0.1
Collector cut-off current	ICEO	A	VCE= -60 V , IB=0	-0.1
Collector cut-off current	ICEO	A	VCE= -40 V , IB=0		-0.1
Collector cut-off current	ICEO	A	VCE= -25 V , IB=0			-0.1
Emitter cut-off current	IEBO	A	VEB= -5 V , IC=0	-0.1
DC current gain	hFE		VCE= -5V,IC= -2mA	125-250	220-475	420-800
Collector-emitter saturation voltage	VCE(sat)	V	IC=-100mA,IB= -5 mA	-0.5
Base-emitter saturation voltage	VBE(sat)	V	IC= -100mA, IB= -5mA	-1.1
Transition frequency	fT	MHz	VCE= -5 V, IC= -10mA, f=100MHz	100
Collector capacitance	Cob	pF	VCB=-10V, f=1MHz	4.5