SOT223 NPN Transistor High Diode BCP56-10 Offering High Collector Current and Low Saturation Voltage

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Product Description

Product Overview

The BCP54, BCP55, and BCP56 are high diode semiconductor transistors in a SOT-223 plastic-encapsulated package. They are designed for AF driver and output stages, offering high collector current, low collector-emitter saturation voltage, and complementary types (BCP51-BCP53). These NPN transistors are suitable for various electronic applications requiring reliable amplification and switching.

Product Attributes

Brand: High Diode Semiconductor
Package Type: SOT-223
Transistor Type: NPN

Technical Specifications

Model	Collector-Base Voltage (V)	Collector-Emitter Voltage (V)	Emitter-Base Voltage (V)	Collector Current -Continuous (A)	Collector Power Dissipation (W)	Thermal Resistance Junction to Ambient (C/W)	Junction and Storage Temperature Range (C)	Collector-base breakdown voltage (V)	Collector-emitter breakdown voltage (V)	Base-emitter breakdown voltage (V)	Collector cut-off current (nA)	DC current gain hFE(1)	DC current gain hFE(2)	DC current gain hFE(3)	Collector-emitter saturation voltage (V)	Base-emitter voltage (V)	Transition frequency (MHz)	Peak Pulse Collector Current (A)	Base Current-Continuous (mA)	Peak Pulse Base Current (mA)
BCP54	45	45	5	1	1.5	83.3	-55~+150	45	45	5	100	25	63-160	25	0.5	1	100	2	100	200
BCP55	60	60	5	1	1.5	83.3	-55~+150	60	60	5	100	25	63-160	25	0.5	1	100	2	100	200
BCP56	100	80	5	1	1.5	83.3	-55~+150	100	80	5	100	25	63-160	25	0.5	1	100	2	100	200