Durable High Diode SS8550 PNP transistor designed for general purpose electronic circuit integration

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Product Description

Product Overview

The SS8550 is a complementary PNP transistor to the SS8050, designed for general-purpose applications. It features a SOT-23 plastic-encapsulated package and is suitable for various electronic circuits requiring amplification or switching.

Product Attributes

Brand: High Diode Semiconductor
Complementary to: SS8050
Package: SOT-23

Technical Specifications

Symbol	Parameter	V_CEBO	V_CEO	V_EBO	I_C	P_C	R_JA	T_j	T_stg	h_FE Rank	h_FE Range
SS8550	General Characteristics	-40 V	-25 V	-5 V	-1.5 A	300 mW	417 /W	150	-55+150	L, H, J	120-200, 200-350, 300-400

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V_(BR)CBO	I_C=-100A, I_E=0	-40			V
Collector-emitter breakdown voltage	V_(BR)CEO	I_C=-0.1mA, I_B=0	-25			V
Emitter-base breakdown voltage	V_(BR)EBO	I_E=-100A, I_C=0	-5			V
Collector cut-off current	I_CBO	V_CB=-40V, I_E=0			-100	nA
Collector cut-off current	I_CEO	V_CE=-20V, I_B=0			-100	nA
Emitter cut-off current	I_EBO	V_EB=-5V, I_C=0			-100	nA
DC current gain	h_FE(1)	V_CE=-1V, I_C=-100mA	120		400
DC current gain	h_FE(2)	V_CE=-1V, I_C=-800mA	40
Collector-emitter saturation voltage	V_CE(sat)	I_C=-800mA, I_B=-80mA			-0.5	V
Base-emitter saturation voltage	V_BE(sat)	I_C=-800mA, I_B=-80mA			-1.2	V
Base-emitter voltage	V_BE	V_CE=-1V, I_C=-10mA		-1		V
Transition frequency	f_T	V_CE=-10V,I_C=-50mA , f=30MHz		100		MHz
Collector output capacitance	C_ob	V_CB=-10V, I_E=0, f=1MHz			20	pF