NPN transistor High Diode MMBT3904 featuring 40 volts collector emitter voltage in small SOT23 package

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Product Description

Product Overview

The MMBT3904 is a high diode semiconductor NPN transistor in a SOT-23 package. It offers a collector-emitter voltage of 40V and a collector current of 200mA, making it suitable for general-purpose amplification and switching applications.

Product Attributes

Brand: High Diode Semiconductor
Package: SOT-23
Type: NPN Transistor
Complementary to: MMBT3906

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VCEO	Collector-Emitter Voltage				40	V
IC	Collector Current				200	mA
V(BR)CBO	Collector-base breakdown voltage	IC=10A, IE=0	60			V
V(BR)CEO	Collector-emitter breakdown voltage	IC=1mA, IB=0	40			V
V(BR)EBO	Emitter-base breakdown voltage	IE=10A, IC=0	6			V
ICEX	Collector cut-off current	VCE=30V, VEB(off)=3V			50	nA
ICBO	Collector cut-off current	VCB= 60V, IE=0			100	nA
IEBO	Emitter cut-off current	VEB=5V, IC=0			100	nA
hFE	DC current gain	VCE=1V, IC=10mA	100		300
hFE	DC current gain	VCE=1V, IC=50mA		60
hFE	DC current gain	VCE=1V, IC=100mA		30
VCE(sat)	Collector-emitter saturation voltage	IC=50mA, IB=5mA		0.3		V
VBE(sat)	Base-emitter saturation voltage	IC=50mA, IB=5mA		0.95		V
fT	Transition frequency	VCE=20V,IC=10mA, f=100MHz		300		MHz
td	Delay time	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA		35		ns
tr	Rise time	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA		35		ns
ts	Storage time	VCC=3V, IC=10mA, IB1= IB2=1mA		200		ns
tf	Fall time	VCC=3V, IC=10mA, IB1= IB2=1mA		50		ns
PC	Collector Power Dissipation				200	mW
RJA	Thermal Resistance From Junction To Ambient			625		/W
Tj	Junction Temperature				150
Tstg	Storage Temperature		-55		+150