SOT23 Package NPN Transistor High Diode MMBT2222A With Epitaxial Planar Die For General Applications

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Product Description

Product Overview

The MMBT2222A is an NPN epitaxial planar die construction transistor designed for general-purpose applications. It offers a complementary PNP type, the MMBT2907A. This device is packaged in a SOT-23 package, making it suitable for surface mount applications.

Product Attributes

Brand: High Diode Semiconductor
Complementary Type: MMBT2907A (PNP)
Package: SOT-23
Construction: Epitaxial planar die
Marking: 1P

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VCEO	Collector-Emitter Voltage				40	V
VEBO	Emitter-Base Voltage				6	V
IC	Collector Current				600	mA
PC	Collector Power Dissipation				300	mW
V(BR)CBO	Collector-base breakdown voltage	IC= 10A, IE=0	75			V
V(BR)CEO	Collector-emitter breakdown voltage	IC= 10mA, IB=0	40			V
V(BR)EBO	Emitter-base breakdown voltage	IE=10A, IC=0	6			V
ICBO	Collector cut-off current	VCB=60V, IE=0			0.01	A
ICEX	Collector cut-off current	VCE=30V,VBE(off)=3V			0.01	A
IEBO	Emitter cut-off current	VEB= 3V, IC=0			0.1	A
hFE(1)	DC current gain	VCE=10V, IC= 150mA	100		300
hFE(2)	DC current gain	VCE=10V, IC= 0.1mA	40
hFE(3)	DC current gain	VCE=10V, IC= 500mA		42
VCE(sat)	Collector-emitter saturation voltage	IC=500 mA, IB= 50mA			1.0	V
VCE(sat)	Collector-emitter saturation voltage	IC=150 mA, IB=15mA			0.3	V
VBE(sat)	Base-emitter saturation voltage	IC=500 mA, IB= 50mA			2.0	V
VBE(sat)	Base-emitter saturation voltage	IC=150 mA, IB=15mA			1.2	V
fT	Transition frequency	VCE=20V, IC= 20mA, f=100MHz		300		MHz
td	Delay time	VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA			10	ns
tr	Rise time	VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA			25	ns
tS	Storage time	VCC=30V, IC=150mA IB1=-IB2=15mA			225	ns
tf	Fall time	VCC=30V, IC=150mA IB1=-IB2=15mA			60	ns
RJA	Thermal Resistance From Junction To Ambient			417		/W
Tj	Junction Temperature				150
Tstg	Storage Temperature		-55		+150