Load Switch N Channel MOSFET HUASHUO HSS2012 Featuring High Cell Density Trench Design and Switching
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HSS2012 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include super low gate charge and excellent Cdv/dt effect decline, utilizing advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSS2012 | Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | ±12 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ 4.5V | 6.8 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ 4.5V | 5.3 | A | |||
| Pulsed Drain Current (IDM) | 26 | A | ||||
| Total Power Dissipation (PD@TA=25) | 1.25 | W | ||||
| Total Power Dissipation (PD@TA=70) | 0.76 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | 100 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=6A | 10 | 14 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=2.5V , ID=5A | 21 | m | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.5 | 1.0 | V | ||
| Total Gate Charge (Qg) | VDS=15V , VGS=4.5V , ID=4A | 13 | nC |
Package: SOT-23L
Packaging: 3000/Tape&Reel
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