HL Haolin Elec D965 NPN Transistor with High Current Capability and Low Saturation Voltage SOT-89-3L

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Product Description

Product Overview

This is a high-performance NPN transistor in a SOT-89-3L package, designed for various electronic applications. It features low collector-emitter saturation voltage, large collector power dissipation, and high current handling capabilities, making it suitable for demanding power applications. The mini-power type package ensures compact integration.

Product Attributes

Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
Model: D965
Package Type: SOT-89-3L
Material: Plastic-Encapsulate
Marking: 965

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0			40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0			20	V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A,IC=0			7	V
Collector cut-off current	ICBO	VCB=10V,IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=7V,IC=0			0.1	A
DC current gain	hFE(1)	VCE=2V, IC=1mA		200
	hFE(2)	VCE=2V, IC=500mA		230	800
	hFE(3)	VCE=2V, IC=2A		150
Collector-emitter saturation voltage	VCE(sat)	IC=3A,IB=0.1A			1	V
Transition frequency	fT	VCE=6V,IC=50mAf=200MHz		150		MHz
Collector output capacitance	Cob	VCB=20V, IE=0, f=1MHz			50	pF
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				20	V
Emitter-Base Voltage	VEBO				7	V
Collector Current	IC				5	A
Collector Power Dissipation	PC				750	mW
Thermal Resistance From Junction To Ambient	RJA				167	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150