HL Haolin Elec C945 GR T 2040 Plastic Encapsulated Transistor Designed for Electronic Amplification

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Product Description

Product Overview

This document describes the TO-92 Plastic-Encapsulated Transistor (NPN) from SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD. It features excellent hFE linearity and low noise, making it a complementary part to the A733. This transistor is suitable for various electronic applications requiring reliable amplification and switching.

Product Attributes

Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
Origin: Not specified
Material: Plastic-Encapsulated
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
MAXIMUM RATINGS
Collector-Base Voltage	VCBO	(TA=25 unless otherwise noted)			60	V
Collector-Emitter Voltage	VCEO	(TA=25 unless otherwise noted)			50	V
Emitter-Base Voltage	VEBO	(TA=25 unless otherwise noted)			5	V
Collector Current -Continuous	IC	(TA=25 unless otherwise noted)			150	mA
Collector Power Dissipation	PC	(TA=25 unless otherwise noted)			400	mW
Junction Temperature	TJ	(TA=25 unless otherwise noted)			125
Storage Temperature	Tstg	(TA=25 unless otherwise noted)	-55		125
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltage	V(BR)CBO	IC=1mA , IE=0			60	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=100uA , IB=0			50	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100mA, IC=0			5	V
Collector cut-off current	ICBO	VCB=60V, IE=0		0.1	uA
Collector cut-off current	ICEO	VCE=45V		0.1	uA
Emitter cut-off current	IEBO	VEB=5V , IC=0		0.1	uA
DC current gain	hFE(1)	VCE=6 V , IC=1mA	70		700
DC current gain	hFE(2)	VCE=6 V , IC=0.1mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=10mA		0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=10mA		1	V
Transition frequency	fT	VCE=6V,IC=10mA,f =30 MHz		200	MHz
Collector output capacitance	Cob	VCB=10V,IE=0,f=1MHZ		3.0	pF
Noise figure	NF	VCE=6V,IC=0.1mA RG=10k,f=1kMHZ		10	dB