HL Haolin Elec HT13003 power switching NPN transistor in TO126C plastic package for electronic circuit

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Product Description

Product Overview

The HT13003 (AFO) is an NPN bipolar transistor from SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD, designed for power switching applications. Encapsulated in a TO-126C plastic package, it offers robust performance for various electronic circuits.

Product Attributes

Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
Origin: China
Package Type: TO-126C

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	Units
Collector-Base Voltage	VCBO				700	V
Collector-Emitter Voltage	VCEO				480	V
Emitter-Base Voltage	VEBO				9	V
Collector Current - Continuous	IC				1.5	A
Collector Power Dissipation	PC	(Ta=25)			1.5	W
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		150
Collector-base breakdown voltage	V(BR)CBO	IC =5mA, IE=0	700			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=10mA, IB=0	480			V
Emitter-base breakdown voltage	V(BR)EBO	IE=2mA, IC=0	9			V
Collector cut-off current	ICBO	VCB=700V,IE=0			1	mA
Collector cut-off current	ICEO	VCE=400V,IB=0			0.5	mA
Emitter cut-off current	IEBO	VEB=9V, IC=0			1	mA
DC current gain	hFE1	VCE=5V, IC= 0.5 A	8		40
DC current gain	hFE2	VCE=5V, IC= 1.5A			5
Collector-emitter saturation voltage	VCE(sat)	IC=1A,IB=0.25A			1	V
Base-emitter saturation voltage	VBE(sat)	IC=1A,IB=0.25A			1.3	V
Transition frequency	fT	VCE=10V,Ic=100mA, f =1MHz			5	MHz
Fall time	tf	IC=1A, IB1=-IB2=0.2A, VCC=100V			0.8	s
Storage time	tS	IC=250mA		2	4	s

Symbol	Dimensions In Millimeters	Dimensions In Inches
A	3.000 - 3.400	0.118 - 0.134
A1	1.800 - 2.200	0.071 - 0.087
b	0.660 - 0.860	0.026 - 0.034
b1	1.170 - 1.370	0.046 - 0.054
c	0.450 - 0.600	0.018 - 0.024
D	7.800 - 8.200	0.307 - 0.323
E	10.800 - 11.200	0.425 - 0.441
e
e1	4.460 - 4.660	0.176 - 0.183
L	15.300 - 15.700	0.602 - 0.618
L1	1.300 - 1.500	0.051 - 0.059
P	4.040 - 4.240	0.159 - 0.167
1	2.700 - 2.900	0.106 - 0.114
2	3.100 - 3.300	0.122 - 0.130
(Base Pin)	2.280 TYP.	0.090 TYP.