Product Overview
The HDF560N is an ultra-fast recovery diode device manufactured using advanced silicon epitaxial planar technology. It features a carefully designed process and structure, resulting in a low forward voltage drop and an ultra-fast reverse recovery time. Precise epitaxial doping control, an advanced planar junction termination protection structure, and platinum doping control of minority carrier lifetime ensure optimal comprehensive parameters, high durability, and reliability. This diode is widely applicable in the output rectification stage of switching power supplies, uninterruptible power supplies, and DC-DC converters. It also serves as a freewheeling diode for low-voltage conversion and inductive motor drives.
Product Attributes
Technical Specifications
| Parameter Name | Symbol | Range | Unit |
| Repetitive Peak Reverse Voltage | VRRM | 700 | V |
| Average Forward Rectified Current | IF(AV) | 5.0 | A |
| Surge Forward Current @8.3ms | IFSM | 90 | A |
| Operating Junction Temperature Range | TJ | -50+150 | C |
| Storage Temperature Range | Tstg | -50+150 | C |
| Chip to Case Thermal Resistance | RJC | 2.0 | C/W |
Electrical Characteristics
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
| Maximum Forward Voltage | VF | -- | 1.95 | 2.1 | V | IF=5.0Amps, TC=25C |
| Maximum Reverse Leakage Current | IR | -- | -- | 5.0 | A | At DC working voltage, TC=25C |
| Maximum Reverse Recovery Time | trr | -- | -- | 35 | ns | IF=0.5 Amp, IR=1.0Amp, IREC=0.25Amp |
Package Information
| Package Type | Dimensions (mm) |
| TO-252-2L | (Dimensions not specified in provided text) |
