Dual digital transistor HT Shenzhen Jinyu Semicon PT5311N NPN and PNP transistors for circuit design
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Product Description
Product Overview
The PT5311N is a DUAL DIGITAL TRANSISTOR (NPN+PNP) designed for applications where independent transistor elements are required, eliminating interference. This dual transistor configuration allows for significant reductions in mounting cost and area by cutting them in half compared to discrete components. It is suitable for various electronic circuits requiring both NPN and PNP transistor functionality in a single package.
Product Attributes
- Brand: JinYu Semiconductor
- Model: PT5311N
- Package: SOT-353
- Date: 2021/12
Technical Specifications
| Parameter | Symbol | NPN Min | NPN Typ | NPN Max | NPN Unit | NPN Conditions | PNP Min | PNP Typ | PNP Max | PNP Unit | PNP Conditions |
| Input voltage (off) | VI(off) | V | VCC=5V ,IO=100A | V | VCC=-5V ,IO=-100A | ||||||
| Input voltage (on) | VI(on) | 3 | V | VO=0.3V ,IO=10mA | -3 | V | VO=-0.3V ,IO=-10mA | ||||
| Output voltage (on) | VO(on) | 0.3 | V | IO/II=10mA/0.5mA | -0.3 | V | IO/II=-10mA/-0.5mA | ||||
| Input current | II | 0.88 | mA | VI=5V | -0.88 | mA | VI=-5V | ||||
| Output current (off) | IO(off) | 0.5 | A | VCC=50V, VI=0 | -0.5 | A | VCC=-50V, VI=0 | ||||
| DC current gain | GI | 30 | VO=5V,IO=5mA | 30 | VO=-5V,IO=-5mA | ||||||
| Input resistance | R1 | 7 | 10 | 13 | k | 7 | 10 | 13 | k | ||
| Resistance ratio | R2/R1 | 0.8 | 1 | 1.2 | 0.8 | 1 | 1.2 | ||||
| Transition frequency | fT | 250 | MHz | VCE=10V ,IE=-5mA,f=100MHz | 250 | MHz | VCE=-10V ,IE=5mA,f=100MHz |
| Parameter | Symbol | Limits | Unit | Conditions |
| Supply voltage | VCC | 50 | V | |
| Input voltage | VIN | -10~+40 | V | |
| Output current | ICM | 100 | mA | |
| Power dissipation | PD | 150 | mW | Ta=25 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55~+150 |
| Parameter | Symbol | Limits | Unit | Conditions |
| Supply voltage | VCC | -50 | V | |
| Input voltage | VIN | -40~+10 | V | |
| Output current | ICM | -100 | mA | |
| Power dissipation | PD | 150 | mW | Ta=25 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55~+150 |
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