High cell density trench technology MOSFET HUASHUO HSBA6224 dual N channel 60V fast switching device
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Delivery Time:
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Product Description
Product Overview
The HSBA6224 is a dual N-channel 60V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
- EAS Guaranteed: 100%
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBA6224 | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) @ TC=25, VGS @ 10V | 50 | A | ||||
| Continuous Drain Current (ID) @ TC=70, VGS @ 10V | 25 | A | ||||
| Pulsed Drain Current (IDM) | 150 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 64 | mJ | ||||
| Avalanche Current (IAS) | 25 | A | ||||
| Total Power Dissipation (PD) @ TA=25 | 3.6 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | --- | 25 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 2.8 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=12A | --- | 11 | 16 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=10A | --- | 15 | 20 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=15A | --- | 45 | --- | S | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | ||
| Total Gate Charge (Qg) (4.5V) | VDS=48V , VGS=4.5V , ID=15A | --- | 19 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | 7.1 | --- | nC | ||
| Gate-Drain Charge (Qgd) | --- | 7.6 | --- | nC | ||
| Turn-On Delay Time (td(on)) | VDD=30V , VGS=10V , RG=3.3 ID=15A | --- | 7.3 | --- | ns | |
| Rise Time (tr) | --- | 50 | --- | ns | ||
| Turn-Off Delay Time (td(off)) | --- | 33 | --- | ns | ||
| Fall Time (tf) | --- | 7.6 | --- | ns | ||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | --- | 2427 | --- | pF | |
| Output Capacitance (Coss) | --- | 165 | --- | pF | ||
| Reverse Transfer Capacitance (Crss) | --- | 96 | --- | pF | ||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 35 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V | |
| Reverse Recovery Time (trr) | IF=15A , dI/dt=100A/s , TJ=25 | --- | 16.1 | --- | nS | |
| Reverse Recovery Charge (Qrr) | --- | 11 | --- | nC |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina