Advanced Trench MOS Technology N Channel Fast Switching MOSFET HUASHUO HSBB6066 for Power Management
Product Overview
The HSBB6066 is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring advanced Trench MOS Technology, it offers low gate charge and low RDS(ON) for enhanced efficiency. This MOSFET is 100% EAS guaranteed and available in a Green Device option. Its key applications include motor control, DC/DC converters, and synchronous rectifier circuits, providing reliable and efficient power management solutions.
Product Attributes
- Brand: HS
- Technology: Advanced Trench MOS
- Device Type: N-Channel Fast Switching MOSFET
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current | 60 | A | |||
| ID@TC=100 | Continuous Drain Current | 37 | A | |||
| IDM | Pulsed Drain Current | 130 | A | |||
| EAS | Single Pulse Avalanche Energy | 93 | mJ | |||
| IAS | Avalanche Current | 43 | A | |||
| PD@TC=25 | Total Power Dissipation | 45 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 55 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 2.8 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | 4.4 | 5.2 | m | |
| VGS=4.5V , ID=10A | 6.4 | 7.8 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.65 | 2.3 | V |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=48V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.3 | --- | ||
| Qg | Total Gate Charge (4.5V) | VDS=30V , VGS=10V , ID=20A | 33 | --- | nC | |
| Qgs | Gate-Source Charge | 18 | --- | nC | ||
| Qgd | Gate-Drain Charge | 6 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=20A | 7.5 | --- | ns | |
| Tr | Rise Time | 6 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 29 | --- | ns | ||
| Tf | Fall Time | 7.5 | --- | ns | ||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | 1670 | --- | pF | |
| Coss | Output Capacitance | 438 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 25 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | 60 | A | |
| ISM | Pulsed Source Current | --- | 130 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=15A , dI/dt=100A/s , TJ=25 | --- | 23 | nS | |
| Qrr | Reverse Recovery Charge | --- | 60 | nC | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBB6066 | PRPAK3*3 | 3000/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=43A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
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