High Frequency MOSFET HUAYI HY1904C2 Designed for Point of Load Converters and Power Tool Systems
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HY1904C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems. It offers a 40V/65A rating with low on-resistance (RDS(ON)) of 5.1m (typ.) at VGS = 10V and 6.2m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, rugged, and halogen-free options are available.
Product Attributes
- Brand: HYMECHA
- Origin: China
- Material: Halogen-Free Devices Available (compliant with RoHS)
- Certifications: RoHS compliant, J-STD-020 MSL classification
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | 40 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Maximum Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Source Current-Continuous(Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | 65 | A | ||
| Pulsed Drain Current | IDM | Tc=25C | 260 | A | ||
| Continuous Drain Current | ID | Tc=25C | 65 | A | ||
| Continuous Drain Current | ID | Tc=100C | 41 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 48 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 19 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 2.6 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on 1in2 FR-4 board | 35 | C/W | ||
| Single Pulsed Avalanche Energy | EAS | L=0.1mH, Limited by TJmax, starting TJ=25C, L = 0.1mH, RG= 25, VGS =10V | 145 | mJ | ||
| Electrical Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 40 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=40V,VGS=0V | - | 1 | A | |
| Drain-to-Source Leakage Current | IDSS | TJ=55C | - | 5 | A | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1 | 1.7 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | 5.1 | 6 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | 6.2 | 7 | m | |
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | 0.8 | 1.2 | V | |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/s | 23 | - | ns | |
| Reverse Recovery Charge | Qrr | 58 | - | nC | ||
| Electrical Characteristics (Cont.) (Tc =25C Unless Otherwise Noted) | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 1.5 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | 2391 | - | pF | |
| Output Capacitance | Coss | 359 | - | pF | ||
| Reverse Transfer Capacitance | Crss | 195 | - | pF | ||
| Turn-on Delay Time | td(ON) | VDD=20V,RG=3.3, IDS=20A,VGS=10V | 13 | - | ns | |
| Turn-on Rise Time | Tr | 11 | - | ns | ||
| Turn-off Delay Time | td(OFF) | 41 | - | ns | ||
| Turn-off Fall Time | Tf | 14 | - | ns | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS =32V, VGS=10V, ID=20A | 56.5 | - | nC | |
| Gate-Source Charge | Qgs | 5.1 | - | - | ||
| Gate-Drain Charge | Qgd | 13.5 | - | - | ||
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Sellina