Fast switching dual P channel MOSFET HUASHUO HSBA3331 30V with low gate charge and trench technology
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HSBA3331 is a dual P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Technology: Trench P-channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| HSBA3331 | Drain-Source Voltage (VDS) | -30 | V | ||||
| Gate-Source Voltage (VGS) | ±20 | V | |||||
| Continuous Drain Current (ID) @ TC=25 | VGS @ -10V | -60 | A | ||||
| Continuous Drain Current (ID) @ TC=100 | VGS @ -10V | -40 | A | ||||
| Pulsed Drain Current (IDM) | -200 | A | |||||
| Single Pulse Avalanche Energy (EAS) | 80 | mJ | |||||
| Avalanche Current (IAS) | -40 | A | |||||
| Total Power Dissipation (PD) @ TC=25 | 40 | W | |||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-ambient (RJA) | (t<<10S) | --- | 35 | /W | |||
| Thermal Resistance Junction-ambient (RJA) | (Steady State) | --- | 55 | /W | |||
| Thermal Resistance Junction-case (RJC) | --- | 2.2 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -30 | --- | --- | V | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-20A | --- | 6.5 | 7.7 | mΩ | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-15A | --- | 8.2 | 10 | mΩ | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.2 | -1.5 | -2.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=25 | --- | -1 | µA | |||
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=55 | --- | -5 | µA | |||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | ±100 | nA | |||
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 1.2 | --- | Ω | ||
| Total Gate Charge (Qg) (-10V) | VDS=-15V , VGS=-10V , ID=-18A | --- | 60 | --- | nC | ||
| Gate-Source Charge (Qgs) | --- | 9 | --- | nC | |||
| Gate-Drain Charge (Qgd) | --- | 15 | --- | nC | |||
| Turn-On Delay Time (Td(on)) | VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-20A | --- | 17 | --- | ns | ||
| Rise Time (Tr) | --- | 40 | --- | ns | |||
| Turn-Off Delay Time (Td(off)) | --- | 55 | --- | ns | |||
| Fall Time (Tf) | --- | 13 | --- | ns | |||
| Input Capacitance (Ciss) | VDS=-25V , VGS=0V , f=1MHz | --- | 3450 | --- | pF | ||
| Output Capacitance (Coss) | --- | 255 | --- | pF | |||
| Reverse Transfer Capacitance (Crss) | --- | 140 | --- | pF | |||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | -60 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |||
| Reverse Recovery Time (trr) | IF=-20A , di/dt=100A/µs , TJ=25 | --- | 22 | nS | |||
| Reverse Recovery Charge (Qrr) | --- | 72 | nC |
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