Power MOSFET HUASHUO HSU6117 P Channel 60V with Low Gate Charge and Full Function Reliability Approval
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HSU6117 is a P-channel 60V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -60 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -35 | A | |||
| IDM | Pulsed Drain Current2 | -170 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 330 | mJ | |||
| IAS | Avalanche Current | 40 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 90 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.4 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-18A | --- | 14 | m | |
| VGS=-4.5V , ID=-12A | --- | 17 | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | 4.28 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-48V , VGS=0V , TJ=55 | --- | 5 | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-10V , ID=-18A | 43 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 2.6 | --- | ||
| Qg | Total Gate Charge | VDS=-30V , VGS=-10V , ID=-12A | 85 | --- | nC | |
| Qgs | Gate-Source Charge | 11 | --- | |||
| Qgd | Gate-Drain Charge | 30 | --- | |||
| td(on) | Turn-On Delay Time | VDD=-30V , VGS=-10V , RG=6, ID=-1A | 18 | --- | ns | |
| tr | Rise Time | 12 | --- | |||
| td(off) | Turn-Off Delay Time | 100 | --- | |||
| tf | Fall Time | 68 | --- | |||
| Ciss | Input Capacitance | VDS=-30V , VGS=0V , f=1MHz | 4635 | --- | pF | |
| Coss | Output Capacitance | 524 | --- | |||
| Crss | Reverse Transfer Capacitance | 241 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -40 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSU6117 | TO252-2 | 2500/Tape&Reel | ||||
Notes:
- 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
- 3. The EAS data shows Max. rating. The test condition is VDD=-30V, VGS=-10V, L=0.5mH, IAS=-40A.
- 4. The power dissipation is limited by 150 junction temperature.
- 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina