Power Control with HUASHUO HSBA90N12 N Channel Fast Switching MOSFET and Advanced Trench MOS Design
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HSBA90N12 is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring advanced trench MOS technology, it offers low gate charge and low on-resistance (Rds(on)), with a guaranteed 100% EAS rating. This device is suitable for load switching, LED applications, networking, and quick chargers, providing efficient and reliable power management. It is available as a Green Device.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench MOS
- Device Type: N-Channel MOSFET
- Switching Speed: Fast
- Availability: Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBA90N12 | Drain-Source Voltage (VDS) | 120 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | 90 | A | ||||
| Continuous Drain Current (ID@TC=100) | 58 | A | ||||
| Pulsed Drain Current (IDM) | 320 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 580 | mJ | ||||
| Avalanche Current (IAS) | 48 | A | ||||
| Total Power Dissipation (PD@TC=25) | 125 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 55 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 1 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 120 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=20A | --- | 6.5 | 8 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=20A | --- | 7.9 | 10 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.2 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=96V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Model | Parameter | Conditions | Typ. | Max. | Units |
|---|---|---|---|---|---|
| HSBA90N12 | Gate Resistance (Rg) | VDS=0V , VGS=20V,f=1MHz | 1.5 | --- | |
| Total Gate Charge (Qg) (10V) | VDS=60V , VGS=4.5V , ID=20A | --- | --- | nC | |
| Total Gate Charge (Qg) (4.5V) | 39 | --- | nC | ||
| Gate-Source Charge (Qgs) | 10.3 | --- | nC | ||
| Gate-Drain Charge (Qgd) | 19.5 | --- | nC |
| Model | Parameter | Conditions | Typ. | Max. | Units |
|---|---|---|---|---|---|
| HSBA90N12 | Turn-On Delay Time (Td(on)) | VDD=30V , VGS=10V , RG=6, ID=1A | 26 | --- | ns |
| Rise Time (Tr) | 15 | --- | ns | ||
| Turn-Off Delay Time (Td(off)) | 65 | --- | ns | ||
| Fall Time (Tf) | 85 | --- | ns |
| Model | Parameter | Conditions | Typ. | Max. | Units |
|---|---|---|---|---|---|
| HSBA90N12 | Input Capacitance (Ciss) | VDS=60V , VGS=0V , f=1MHz | 3820 | --- | pF |
| Output Capacitance (Coss) | 525 | --- | pF | ||
| Reverse Transfer Capacitance (Crss) | 17 | --- | pF |
| Model | Parameter | Conditions | Typ. | Max. | Units |
|---|---|---|---|---|---|
| HSBA90N12 | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | 90 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina