HSBA4206 Dual N Channel 40V MOSFET Featuring Low Gate Charge and High Cell Density Trench Technology
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HSBA4206 is a dual N-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDSON and gate charge, making it suitable for most synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: HS
- Product Type: Dual N-Channel MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Parameter | Value | Conditions |
|---|---|---|
| Model | HSBA4206 | |
| Channel Type | N-Channel | |
| Drain-Source Voltage (VDS) | 40 V | |
| Continuous Drain Current (ID) | 35 A | |
| Storage Temperature Range | -55 to 150 C | |
| Typical RDSON | 7.9 m | |
| Total Gate Charge (QG) | ~35 nC | VDS=20V, ID=12A |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina