Load Switching Device HUAYI HYG800P10LR1S P Channel MOSFET with RoHS Compliant Halogen Free Design
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HYG800P10LR1S is a P-Channel Enhancement Mode MOSFET from Hymexa, designed for power management and load switching applications. It features a -100V/-8A rating, low on-resistance (RDS(ON) of 72 m typ. @ VGS = -10V), 100% avalanche tested, and is available in halogen-free (RoHS compliant) versions. This device offers reliability and ruggedness for DC/DC power management and load switching scenarios.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free
- Package Type: SOP-8L
Technical Specifications
| Parameter | Condition | Value | Unit |
| Drain-Source Voltage (VDSS) | - | -100 | V |
| Gate-Source Voltage (VGSS) | - | 20 | V |
| Junction Temperature Range (TJ) | - | -55 to 150 | C |
| Storage Temperature Range (TSTG) | - | -55 to 150 | C |
| Continuous Drain Current (ID) | Tc=25C | -8 | A |
| Continuous Drain Current (ID) | Tc=100C | -5.1 | A |
| Pulsed Drain Current (IDM) | Tc=25C | -32 | A |
| Maximum Power Dissipation (PD) | Tc=25C | 5.4 | W |
| Maximum Power Dissipation (PD) | Tc=100C | 2.1 | W |
| Thermal Resistance (RJC) | Junction to Lead | 23 | C/W |
| Thermal Resistance (RJA) | Junction to Ambient | 40 | C/W |
| Single Pulsed Avalanche Energy (EAS) | L=0.3mH | 87.9 | mJ |
| Drain-Source On-State Resistance (RDS(ON)) | VGS = -10V, IDS = -8A | 72 (typ.) | m |
| Drain-Source On-State Resistance (RDS(ON)) | VGS = -4.5V, IDS = -5A | 80 (typ.) | m |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=-250A | -1.0 to -3.0 | V |
| Input Capacitance (Ciss) | VGS=0V, VDS=-50V, F=1.0MHz | 3307 (typ.) | pF |
| Output Capacitance (Coss) | VGS=0V, VDS=-50V, F=1.0MHz | 86 (typ.) | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=-50V, F=1.0MHz | 31 (typ.) | pF |
| Total Gate Charge (Qg) | VDS =-80V, VGS=-10V, ID=-8A | 53.4 (typ.) | nC |
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