Dual N channel 100V fast switching MOSFET HUASHUO HSM0204 with low gate charge and trench technology
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Delivery Time:
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Product Description
Product Overview
The HSM0204 is a dual N-channel, 100V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and is available in a Green Device option. Key features include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Series: HSM0204
- Technology: Trench MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM0204 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 100 | --- | --- | V |
| BVDSS Temperature Coefficient | Reference to 25, ID=1mA | --- | 0.098 | --- | V/ | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=2A | --- | 90 | 112 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=1A | --- | 95 | 120 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.5 | V | |
| VGS(th) Temperature Coefficient | --- | -4.57 | --- | mV/ | ||
| Drain-Source Leakage Current (IDSS) | VDS=80V, VGS=0V, TJ=25 | --- | --- | 10 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=80V, VGS=0V, TJ=55 | --- | --- | 100 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V, ID=2A | --- | 12 | --- | S | |
| Total Gate Charge (Qg) | VDS=60V, VGS=10V, ID=2A | --- | 19.5 | --- | nC | |
| Input Capacitance (Ciss) | VDS=15V, VGS=0V, f=1MHz | --- | 1535 | --- | pF | |
| Output Capacitance (Coss) | VDS=15V, VGS=0V, f=1MHz | --- | 60 | --- | pF | |
| HSM0204 | Continuous Drain Current (ID@TA=25) | VGS @ 10V | --- | --- | 2.5 | A |
| Pulsed Drain Current (IDM) | --- | --- | 10 | A | ||
| HSM0204 | Single Pulse Avalanche Energy (EAS) | --- | --- | 6.1 | mJ | |
| HSM0204 | Total Power Dissipation (PD@TA=25) | --- | --- | 1.5 | W | |
| HSM0204 | Storage Temperature Range (TSTG) | -55 | --- | 150 | ||
| HSM0204 | Operating Junction Temperature Range (TJ) | -55 | --- | 150 | ||
| HSM0204 | Thermal Resistance Junction-ambient (RJA) | --- | --- | 85 | /W | |
| HSM0204 | Thermal Resistance Junction-Case (RJC) | --- | --- | 36 | /W | |
| HSM0204 | Continuous Source Current (IS) | VG=VD=0V, Force Current | --- | --- | 4 | A |
| HSM0204 | Pulsed Source Current (ISM) | --- | --- | 8 | A | |
| HSM0204 | Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25 | --- | --- | 1.2 | V |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM0204 | SOP-8 | 2500/Tape&Reel |
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