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China Single N Channel Enhancement Mode MOSFET HYG025N04NR1C2 with 170 Amp Current and Halogen Free Options for sale
China Single N Channel Enhancement Mode MOSFET HYG025N04NR1C2 with 170 Amp Current and Halogen Free Options for sale
China Single N Channel Enhancement Mode MOSFET HYG025N04NR1C2 with 170 Amp Current and Halogen Free Options for sale
China Single N Channel Enhancement Mode MOSFET HYG025N04NR1C2 with 170 Amp Current and Halogen Free Options for sale

Single N Channel Enhancement Mode MOSFET HYG025N04NR1C2 with 170 Amp Current and Halogen Free Options

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The HYG025N04NR1C2 is a single N-Channel enhancement mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON) = 1.7 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free options are available. This MOSFET is suitable for load switch and battery protection applications.

Product Attributes

  • Brand: HYG (Huayi Microelectronics Co., Ltd.)
  • Origin: China
  • Material: MOSFET
  • Certifications: RoHS compliant, Halogen-free options available

Technical Specifications

ModelFeatureRDS(ON) (typ.) @VGS = 10VVDSSID (Tc=25)Application
HYG025N04NR1C2Single N-Channel Enhancement Mode MOSFET, 100% Avalanche Tested, Reliable and Rugged1.7 m40 V170 ALoad Switch, Battery Protection

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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