N Channel MOSFET HUAYI HY1908P with 90 Amp Continuous Current and 25 Volt Gate Source Voltage Rating
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Product Description
Product Overview
The HY1908 is a N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with an 80V/90A rating, low on-resistance of 7m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. Lead-free devices compliant with RoHS are available.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Lead-Free Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | - | 80 | V |
| Gate-Source Voltage | VGSS | - | - | ±25 | V | |
| Maximum Junction Temperature | TJ | - | -55 | - | 175 | C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | C |
| Source Current-Continuous(Body Diode) | IS | Tc=25C | - | - | 90 | A |
| Pulsed Drain Current | IDM | Tc=25C | - | - | 360** | A |
| Continuous Drain Current | ID | Tc=25C | - | - | 90 | A |
| Continuous Drain Current | ID | Tc=100C | - | - | 64 | A |
| Maximum Power Dissipation | PD | Tc=25C | - | - | 185 | W |
| Maximum Power Dissipation | PD | Tc=100C | - | - | 92 | W |
| Thermal Resistance, Junction-to-Case | RTJC | - | - | 0.81 | - | C/W |
| Thermal Resistance, Junction-to-Ambient | RTJA | ** | - | 62.5 | - | C/W |
| Single Pulsed Avalanche Energy | EAS | L=0.5 mH | - | 416*** | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS= 250A | 80 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS= 80V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current | IDSS | TJ=125C | - | - | 50 | μA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=±25V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 10V,IDS= 45A | - | 7 | 9 | mΩ |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=45A,VGS=0V | - | 0.8 | 1 | V |
| Reverse Recovery Time | trr | ISD=45A,dISD/dt=100A/μs | - | 60 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 125 | - | nC |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 3 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 3800 | - | pF |
| Output Capacitance | Coss | - | - | 389 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 250 | - | pF |
| Turn-on Delay Time | td(ON) | VDD= 40V,RG=6Ω, IDS= 45A,VGS= 10V | - | 25 | 45- | ns |
| Turn-on Rise Time | Tr | - | - | 42 | 75 | ns |
| Turn-off Delay Time | td(OFF) | - | - | 62 | 100 | ns |
| Turn-off Fall Time | Tf | - | - | 19 | 30 | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 64V, VGS= 10V, IDs= 45A | - | 86 | - | nC |
| Gate-Source Charge | Qgs | - | - | 16 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 28 | - | nC |
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Contact Person
Sellina