20V dual P channel MOSFET HUASHUO HSSK8811 featuring trench technology and fast switching for load switch circuits
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The HSSK8811 is a dual P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a green device. Key features include super low gate charge and excellent Cdv/dt effect decline.Product Attributes
- Brand: HS-Semi
- Product Type: Dual P-Channel MOSFET
- Voltage Rating: 20V
- Switching Speed: Fast Switching
- Technology: Trench
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -4.5V1 | -1.5 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ -4.5V1 | -1.2 | A | |||
| IDM | Pulsed Drain Current2 | -4 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.25 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 125 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 100 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-1.5A | 115 | 130 | m | |
| VGS=-2.5V , ID=-1A | 150 | 180 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.3 | -0.65 | -1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | --- | -1 | uA | |
| VDS=-16V , VGS=0V , TJ=55 | --- | -5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-5V , ID=-1A | 5 | --- | S | |
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-1.5A | 4.1 | --- | nC | |
| Qgs | Gate-Source Charge | 0.7 | --- | |||
| Qgd | Gate-Drain Charge | 1 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3 ID=-1.5A | 12 | --- | ns | |
| Tr | Rise Time | 20 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 23 | --- | ns | ||
| Tf | Fall Time | 9 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | 272 | --- | pF | |
| Coss | Output Capacitance | 55 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 44 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | -1.5 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSSK8811 | SOT-363 | 3000/Tape&Reel | 3000 |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina