High Cell Density Trench Technology MOSFET HUASHUO HSM9926 Dual N Channel 20V Fast Switching Device
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Product Description
Product Overview
The HSM9926 is a dual N-channel 20V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge and excellent CdV/dt effect decline, leveraging advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: Dual N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| HSM9926 | Drain-Source Voltage (VDS) | 20 | V | ||||
| Gate-Source Voltage (VGS) | 12 | V | |||||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V | 6 | A | ||||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V | 4 | A | ||||
| Pulsed Drain Current (IDM) | 24 | A | |||||
| Total Power Dissipation (PD@TA=25) | 1.3 | W | |||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-ambient (RJA) | --- | 62.5 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | --- | --- | V | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=4.5V , ID=6A | --- | 22 | 28 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=2.5V , ID=5.2A | --- | 34 | 44 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.6 | 0.9 | 1.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=25 | --- | --- | 1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=12V , VDS=0V | --- | --- | 100 | nA | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | Forward Transconductance (gfs) | VDS=5V , ID=6A | --- | 47 | --- | S | |
| Total Gate Charge (Qg) (4.5V) | VDS=10V , VGS=4.5V , ID=3A | --- | 6.2 | --- | nC | ||
| Gate-Source Charge (Qgs) | --- | 1.6 | --- | nC | |||
| Gate-Drain Charge (Qgd) | --- | 1.5 | --- | nC | |||
| Input Capacitance (Ciss) | VDS=8V , VGS=0V , f=1MHz | --- | 553 | --- | pF | ||
| Timing Characteristics | Turn-On Delay Time (Td(on)) | VDD=10V , VGEN=4.5V , RGEN=6 ID=1A; RL=10 | --- | 9.6 | --- | ns | |
| Rise Time (Tr) | --- | 6.3 | --- | ns | |||
| Turn-Off Delay Time (Td(off)) | --- | 30 | --- | ns | |||
| Fall Time (Tf) | --- | 6.5 | --- | ns | |||
| Capacitance | Output Capacitance (Coss) | VDS=8V , VGS=0V , f=1MHz | --- | 144 | --- | pF | |
| Capacitance | Reverse Transfer Capacitance (Crss) | VDS=8V , VGS=0V , f=1MHz | --- | 120 | --- | pF |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM9926 | SOP-8 | 4000/Tape&Reel |
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