High Current N Channel MOSFET HUAYI HY4008W with TO 247 3L Package and Lead Free Green Device Options
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Product Description
Product Overview
The HOOYI HY4008W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a low on-state resistance (RDS(ON)) of 2.9 m (typ.) at VGS=10V and a high continuous drain current capability. This MOSFET is reliable, rugged, and available in lead-free and green (RoHS compliant) versions. It is 100% avalanche tested and features a TO-247-3L or TO-3P-3L package.
Product Attributes
- Brand: HOOYI
- Model: HY4008W/A
- Package Types: TO-247-3L, TO-3P-3L
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Material: Lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; fully compliant with RoHS.
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 80 | V | |||
| Gate-Source Voltage (VGSS) | ±25 | V | |||
| Maximum Junction Temperature (TJ) | 175 | °C | |||
| Storage Temperature Range (TSTG) | -55 | 175 | °C | ||
| Diode Continuous Forward Current (IS) | TC=25°C, Mounted on Large Heat Sink | 200 | A | ||
| Continuous Drain Current (ID) | TC=25°C | 200 | A | ||
| Continuous Drain Current (ID) | TC=100°C | 153 | A | ||
| Maximum Power Dissipation (PD) | TC=25°C | 397 | W | ||
| Maximum Power Dissipation (PD) | TC=100°C | 199 | W | ||
| Thermal Resistance-Junction to Case (RθJC) | 0.38 | °C/W | |||
| Thermal Resistance-Junction to Ambient (RθJA) | 40 | °C/W | |||
| Avalanche Energy (EAS) | Single Pulsed, L=0.5mH | 1736 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250µA | 80 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=80V, VGS=0V | 1 | µA | ||
| Zero Gate Voltage Drain Current (IDSS) | TJ=85°C, VDS=80V, VGS=0V | 10 | µA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250µA | 2.0 | 3.0 | 4.0 | V |
| Gate Leakage Current (IGSS) | VGS=±25V, VDS=0V | ±100 | nA | ||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V, IDS=100A | 2.9 | mΩ | ||
| Diode Forward Voltage (VSD) | ISD=100A, VGS=0V | 0.8 | 1.2 | V | |
| Reverse Recovery Time (trr) | 30 | ns | |||
| Reverse Recovery Charge (Qrr) | ISD=100A, dlSD/dt=100A/µs | 52 | nC | ||
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | 3.2 | Ω | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 7398 | pF | ||
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 1029 | pF | ||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 650 | pF | ||
| Turn-on Delay Time (td(ON)) | VDD=40V, RG=6 Ω, IDS =100A, VGS=10V | 28 | ns | ||
| Turn-on Rise Time (Tr) | VDD=40V, RG=6 Ω, IDS =100A, VGS=10V | 54 | ns | ||
| Turn-off Delay Time (td(OFF)) | VDD=40V, RG=6 Ω, IDS =100A, VGS=10V | 42 | ns | ||
| Turn-off Fall Time (Tf) | VDD=40V, RG=6 Ω, IDS =100A, VGS=10V | 54 | ns | ||
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS=64V, VGS=10V, IDS=100A | 195 | nC | ||
| Gate-Source Charge (Qgs) | VDS=64V, VGS=10V, IDS=100A | 31 | nC | ||
| Gate-Drain Charge (Qgd) | VDS=64V, VGS=10V, IDS=100A | 75 | nC | ||
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