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Low Gate Voltage N Channel MOSFET HXY MOSFET SI7336ADP T1 GE3 HXY with 180mJ Avalanche Energy Rating

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Product Description

SI7336ADP-T1-GE3

The SI7336ADP-T1-GE3 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 4.5V. This device is designed for applications such as battery protection and general switching.

Product Attributes

  • Brand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD)
  • Origin: Shenzhen, China
  • Type: N-Channel MOSFET

Technical Specifications

SymbolParameterConditionsMin.Typ.Max.Unit
VDSDrain-Source Voltage30V
VGSGate-Source Voltage±20V
ID@TC=25Continuous Drain Current, VGS @ 10V150A
ID@TC=100Continuous Drain Current, VGS @ 10V80A
IDMPulsed Drain Current160A
EASSingle Pulse Avalanche Energy180mJ
IASAvalanche Current60A
PD@TC=25Total Power Dissipation187W
TSTGStorage Temperature Range-55150
TJOperating Junction Temperature Range-55150
RJAThermal Resistance Junction-Ambient162/W
RJCThermal Resistance Junction-Case11.1/W
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA30V
RDS(ON)Static Drain-Source On-ResistanceVGS=10V , ID=30A2.4
RDS(ON)Static Drain-Source On-ResistanceVGS=4.5V , ID=15A3.2V
VGS(th)Gate Threshold VoltageVGS=VDS , ID =250uA1.22.5V
IDSSDrain-Source Leakage CurrentVDS=24V , VGS=0V , TJ=251uA
IGSSGate-Source Leakage CurrentVGS=±20V , VDS=0V±100nA
QgTotal Gate ChargeVDS=15V , VGS=10V , ID=15A56.9nC
CissInput CapacitanceVDS=15V , VGS=0V , f=1MHz124.6pF
CossOutput CapacitanceVDS=15V , VGS=0V , f=1MHz15.8pF
CrssReverse Transfer CapacitanceVDS=15V , VGS=0V , f=1MHz4.345pF
ISContinuous Source CurrentVG=VD=0V , Force Current150A
VSDDiode Forward VoltageVGS=0V , IS=1A , TJ=251.2V

Applications

  • Battery protection
  • Load switch
  • Uninterruptible power supply

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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