HXY MOSFET SI2333 HXY P Channel Enhancement Mode MOSFET designed for PWM and load switch applications
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Product Description
SI2333-HXY P-Channel Enhancement Mode MOSFET
The SI2333-HXY utilizes advanced trench technology to deliver excellent RDS(ON) performance, making it suitable for load switch and PWM applications. Its key features include VDS = -20V, ID = -6.5A, and RDS(ON)
Product Attributes
- Brand: HUAXUANYANG HXY
- Manufacturer: Shenzhen HuaXuanYang Electronics CO.,LTD
- Website: www.hxymos.com
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Limit | Unit | VGS=-4.5V | VGS=-2.5V |
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ||
| Gate-Source Voltage | VGS | ±12 | V | ||
| Drain Current-Continuous | ID | -6.5 | A | ||
| Drain Current-Pulsed | IDM | -15 | A | ||
| Maximum Power Dissipation | PD | 2 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | |||
| Thermal Resistance,Junction-to-Ambient | RJA | 74 | /W | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | ||
| Gate-Body Leakage Current | IGSS | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | -0.45 to -1.0 | V | ||
| Drain-Source On-State Resistance | RDS(ON) | 20 to 36 | mΩ | 28 | 36 |
| Forward Transconductance | gFS | 8.5 | S | ||
| Input Capacitance | Clss | 980 | pF | ||
| Output Capacitance | Coss | 450 | pF | ||
| Reverse Transfer Capacitance | Crss | 250 | pF | ||
| Turn-on Delay Time | td(on) | 12 | nS | ||
| Turn-on Rise Time | tr | 35 | nS | ||
| Turn-Off Delay Time | td(off) | 30 | nS | ||
| Turn-Off Fall Time | tf | 10 | nS | ||
| Total Gate Charge | Qg | 7.8 | nC | ||
| Gate-Source Charge | Qgs | 1.2 | nC | ||
| Gate-Drain Charge | Qg d | 1.6 | nC | ||
| Diode Forward Voltage | VSD | -1.2 | V | ||
| Diode Forward Current | IS | 1.6 | A |
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