synchronous buck converter dual N channel MOSFET HUASHUO HSM1562 with trench technology and RoHS certification
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Product Description
Product Overview
The HSM1562 is a dual N-channel MOSFET featuring high cell density trenched technology, designed for excellent RDS(ON) and gate charge performance. It is ideally suited for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It offers super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: Dual N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 4.8 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 3.8 | A | |||
| IDM | Pulsed Drain Current2 | 9.6 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 25.5 | mJ | |||
| IAS | Avalanche Current | 22.6 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 85 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 36 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.063 | --- | V/ |
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=10V , ID=4A | 32 | mΩ | ||
| VGS=4.5V , ID=2A | 38 | mΩ | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | --- | -5.24 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | µA |
| VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | µA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=4A | --- | 21 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 3.2 | 6.4 | Ω |
| Qg | Total Gate Charge (4.5V) | VDS=48V , VGS=4.5V , ID=4A | --- | 12.6 | --- | nC |
| Qgs | Gate-Source Charge | --- | 3.2 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 6.3 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3Ω, ID=4A | --- | 8 | --- | ns |
| Tr | Rise Time | --- | 14.2 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 24.4 | --- | ns | |
| Tf | Fall Time | --- | 4.6 | --- | ns | |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 1378 | --- | pF |
| Coss | Output Capacitance | --- | 86 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 64 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 4.8 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 9.6 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSM1562 | SOP-8 | 2500/Tape&Reel | ||||
Notes:
- 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
- 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=22.6A.
- 4. The power dissipation is limited by 150 junction temperature.
- 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
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