Industrial grade HXY MOSFET IXYH120N65B3-HXY IGBT transistor suitable for UPS EV charging and welding
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The IXYH120N65B3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low saturation voltage, and low switching losses, contributing to its rugged transient reliability. This device is suitable for industrial applications such as UPS, EV-charging, string inverters, and welding.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: IXYH120N65B3
- Package: TO-247
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Key Performance and Package Parameters | ||||||
| Tvjmax | Maximum Rating | 175 | C | |||
| VC | Collector emitter voltage | TVJ = 25C | 650 | V | ||
| IC | DC collector current, limited by Tvjmax | TC = 25C | 150 | A | ||
| IC | DC collector current, limited by Tvjmax | TC = 100C | 100 | A | ||
| ICpul | Pulsed collector current, limited by Tvjmax | 300 | A | |||
| IF | Maximum Diode forward current, limited by Tvjmax | TC = 25C | 150 | A | ||
| IF | Maximum Diode forward current, limited by Tvjmax | TC = 100C | 100 | A | ||
| IFpul | Diode pulsed current, limited by Tvjmax | 300 | A | |||
| VEG | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| Pto | Power Dissipation | TC = 25C | 429 | W | ||
| Pto | Power Dissipation | TC = 100C | 214 | W | ||
| Tvj | Operating Junction Temperature Range | -55 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +175 | C | ||
| TvjO | Temperature under switching conditions | -40 | +150 | C | ||
| Thermal Resistance | ||||||
| RthJC | IGBT Thermal resistance: junction - case | 0.25 | 0.35 | C/W | ||
| RthJC | Diode Thermal resistance: junction - case | 0.28 | 0.38 | C/W | ||
| Static Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 1mA , TVJ = 25C | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 100A ,TVJ = 25C | - | 1.45 | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 100A ,TVJ = 175C | - | 1.75 | - | V |
| VF | Diode forward voltage | VGE = 0V , IC = 100A ,TVJ = 25C | - | 1.55 | - | V |
| VF | Diode forward voltage | VGE = 0V , IC = 100A ,TVJ = 175C | - | 1.6 | - | V |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 0.88mATVJ = 25C | - | 4 | - | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0VTVJ = 25C | - | - | 100 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| IGES | Gate-Emitter leakage current | VGE = -20V, VCE = 0V | -100 | - | - | nA |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 100K Hz | - | 3452 | - | pF |
| Coes | Output Capacitance | - | 223 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 26 | - | pF | |
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 100A | - | 156 | - | nC |
| Switching Characteristics (TVJ = 25 C) | ||||||
| td(on) | Turn-On Delay Time | Tvj = 25 C, VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | - | 27 | - | ns |
| tr | Turn-On Rise Time | - | 58 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 195 | - | ns | |
| tf | Turn-Off Fall Time | - | 66 | - | ns | |
| Eon | Turn-on energy | - | 3.3 | - | mJ | |
| Eoff | Turn-off energy | - | 1.65 | - | mJ | |
| Ets | Total switching energy | - | 4.35 | - | mJ | |
| Switching Characteristics (TVJ = 175 C) | ||||||
| td(on) | Turn-On Delay Time | Tvj = 175 C, VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | - | 27 | - | ns |
| tr | Turn-On Rise Time | - | 50 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 215 | - | ns | |
| tf | Turn-Off Fall Time | - | 58 | - | ns | |
| Eon | Turn-on energy | - | 3.77 | - | mJ | |
| Eoff | Turn-off energy | - | 2.07 | - | mJ | |
| Ets | Total switching energy | - | 5.84 | - | mJ | |
| Diode Recovery Characteristics (TVj = 25 C) | ||||||
| Trr | Reverse recovery time | VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | - | 123 | - | ns |
| Qrr | Reverse recovery charge | - | 1.95 | - | mC | |
| Irrm | Peak reverse recovery current | - | 30.8 | - | A | |
| Erec | Reverse recovery energy | - | 0.47 | - | mJ | |
| Diode Recovery Characteristics (TVj = 175 C) | ||||||
| Trr | Reverse recovery time | VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | - | 150 | - | ns |
| Qrr | Reverse recovery charge | - | 3.85 | - | mC | |
| Irrm | Peak reverse recovery current | - | 44.1 | - | A | |
| Erec | Reverse recovery energy | - | 0.98 | - | mJ | |
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