Power Switching MOSFET Dual N Channel HYG170ND03LA1S 30 Volt 9 Amp with Avalanche Tested Reliability
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Product Description
Product Overview
The HYG170ND03LA1S is a Dual N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V/9A rating with low on-state resistance (RDS(ON)) of 14.5 m (typ.) at VGS = 10V and 19.7 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HYG (HUAYI)
- Origin: China
- Material: Halogen Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, meets IPC/JEDEC J-STD-020 for MSL classification
Technical Specifications
| Parameter | Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | (Tc=25C Unless Otherwise Noted) | - | - | 30 | V |
| Gate-Source Voltage (VGSS) | (Tc=25C Unless Otherwise Noted) | - | - | 20 | V |
| Junction Temperature Range (TJ) | -55 | - | 150 | C | |
| Storage Temperature Range (TSTG) | -55 | - | 150 | C | |
| Source Current-Continuous (IS) | (Body Diode) Tc=25C | - | - | 9 | A |
| Pulsed Drain Current (IDM) | Tc=25C | - | - | 36 | A |
| Continuous Drain Current (ID) | Tc=25C | - | - | 9 | A |
| Continuous Drain Current (ID) | Tc=70C | - | - | 7.2 | A |
| Maximum Power Dissipation (PD) | Tc=25C | - | - | 2.5 | W |
| Maximum Power Dissipation (PD) | Tc=70C | - | - | 1.6 | W |
| Thermal Resistance, Junction-to-Case (RJC) | - | - | 50 | C/W | |
| Thermal Resistance, Junction-to-Ambient (RJA) | - | - | 80 | C/W | |
| Single Pulsed-Avalanche Energy (EAS) | L=0.1mH | - | 10 | - | mJ |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | - | - | 50 | A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1 | 1.6 | 3 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=6A | - | 14.5 | 18 | m |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=4A | - | 19.7 | 24.6 | m |
| Diode Forward Voltage (VSD) | ISD=1A,VGS=0V | - | 0.7 | 1.0 | V |
| Reverse Recovery Time (trr) | ISD=6A,dISD/dt=100A/s | - | 8 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 19 | - | nC | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 354 | - | pF |
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 59 | - | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 36 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=10V,RG=4, IDS=6A,VGS=10V | - | 3.9 | - | ns |
| Turn-on Rise Time (Tr) | VDD=10V,RG=4, IDS=6A,VGS=10V | - | 7.5 | - | ns |
| Turn-off Delay Time (td(OFF)) | VDD=10V,RG=4, IDS=6A,VGS=10V | - | 15.6 | - | ns |
| Turn-off Fall Time (Tf) | VDD=10V,RG=4, IDS=6A,VGS=10V | - | 4.6 | - | ns |
| Total Gate Charge (Qg) | VDS =24V, VGS=10V, ID=6A | - | 9 | - | nC |
| Gate-Source Charge (Qgs) | VDS =24V, VGS=10V, ID=6A | - | 1.2 | - | nC |
| Gate-Drain Charge (Qgd) | VDS =24V, VGS=10V, ID=6A | - | 2.3 | - | nC |
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Sellina