Durable HXY MOSFET FGH75N60SFTU-HXY IGBT Featuring Positive Temperature Coefficient and Easy Paralleling for Energy Storage
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Product Description
Product Overview
The FGH75N60SFTU is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: FGH75N60SFTU
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | @ TVJ = 25C | 650 | V | ||
| IC | DC collector current(1) | TC = 25C | 90 | A | ||
| TC = 100C | 75 | A | ||||
| ICM | Pulsed collector current | TC = 25C | 300 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 90 | A | ||
| TC = 100C | 75 | A | ||||
| IFM | Diode pulsed current | TC = 25C | 300 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | TVJ = 25C (tp 10s, D < 0.010) | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 330 | W | ||
| TC = 100C | 160 | W | ||||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | Thermal resistance: junction - case IGBT | 0.45 | C/W | |||
| RJC | Thermal resistance: junction - case Diode | 0.54 | C/W | |||
| Electrical Characteristics (@ TVJ = 25C unless otherwise specified) | ||||||
| Static Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A | 1.6 | 2.1 | V | |
| VGE = 15V , IC = 75A ,TVJ = 125C | 1.86 | - | V | |||
| VGE = 15V , IC = 75A ,TVJ = 175C | 2.0 | - | V | |||
| VF | Diode forward voltage | TVJ = 25 C, IF=40A | 1.85 | V | ||
| VGE = 0V , IC =75A | 1.85 | 2.1 | V | |||
| VGE = 0V , IC = 75A ,TVJ = 125C | 1.55 | - | V | |||
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 75 | mA | |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | 100 | nA | |
| gfs | Transconductance | VGE = 20V, IC = 75A | 86 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 2810 | - | pF | |
| Coes | Output Capacitance | 215 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 23 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 75A | 104 | - | nC | |
| Gate to Emitter charge | 15 | - | nC | |||
| Gate to Collector charge | 30 | - | nC | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V IC= 75A, RG(off) = 8 | 20 | - | ns | |
| tr | Turn-On Rise Time | 30 | - | ns | ||
| td(off) | Turn-Off DelayTime | 130 | - | ns | ||
| tf | Turn-Off Fall Time | 32 | - | ns | ||
| Eon | Turn-on energy | 2.04 | - | mJ | ||
| Eoff | Turn-off energy | 0.92 | - | mJ | ||
| Ets | Total switching energy | 2.96 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 75 A, di/dt = 800 A/S | 95 | - | ns | |
| Qrr | Reverse recovery charge | 1.87 | - | mC | ||
| Irrm | Peak reverse recovery current | 8.0 | - | A | ||
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Sellina