RoHS Compliant HUAYI HYG090N06LS1C2 N Channel MOSFET Designed for High Frequency Point of Load Converters
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Product Description
Product Overview
The HYG090N06LS1C2 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features low on-resistance (RDS(ON)= 7.7 m typ. @VGS = 10V, 11.8 m typ. @VGS = 4.5V), 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available. This MOSFET is suitable for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems.
Product Attributes
- Brand: Hymexa
- Model: HYG090N06LS1C2
- Package Type: PDFN5*6-8L (PPAK5*6-8L)
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | 60 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Maximum Junction Temperature | TJ | 175 | C | |||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous | IS | Tc=25C, Mounted on Large Heat Sink | 60 | A | ||
| Pulsed Drain Current | IDM | Tc=25C | 240 | A | ||
| Continuous Drain Current | ID | Tc=25C | 60 | A | ||
| Continuous Drain Current | ID | Tc=100C | 42 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 62.5 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 31.2 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 2.4 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | 50 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH | 85.4 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 60 | V | ||
| Drain-to-Source Leakage Current | IDSS | VDS=60V,VGS=0V | 1 | A | ||
| Drain-to-Source Leakage Current | IDSS | TJ=100C | 50 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1.0 | 1.9 | 3.0 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | 7.7 | 9.2 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | 11.8 | 14.1 | m | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | 0.87 | 1.3 | V | |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/s | 22.9 | ns | ||
| Reverse Recovery Charge | Qrr | 15 | nC | |||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 2.1 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | 926 | pF | ||
| Output Capacitance | Coss | 505 | pF | |||
| Reverse Transfer Capacitance | Crss | 39 | pF | |||
| Turn-on Delay Time | td(ON) | VDD=30V,RG=2.5, IDS=20A,VGS=10V | 7.7 | ns | ||
| Turn-on Rise Time | Tr | 31.7 | ns | |||
| Turn-off Delay Time | td(OFF) | 18.4 | ns | |||
| Turn-off Fall Time | Tf | 34.8 | ns | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg10V | VDS =48V, VGS=10V, ID=20A | 18.5 | nC | ||
| Total Gate Charge | Qg4.5V | 9.4 | nC | |||
| Gate-Source Charge | Qgs | 3.9 | nC | |||
| Gate-Drain Charge | Qgd | 4.8 | nC | |||
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