1200 Volt Insulated Gate Bipolar Transistor HXY MOSFET APT40GR120B-HXY for Energy Conversion Systems

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Product Description

APT40GR120B Insulated Gate Bipolar Transistor

The APT40GR120B is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Model: APT40GR120B
Package: TO-247
Packing: 30PCS

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
Collector emitter voltage	VCE				1200	V
DC collector current	IC	TC = 25C			80	A
DC collector current	IC	TC = 100C			40	A
Pulsed collector current	ICM	TC = 25C			160	A
Maximum Diode forward current	IF	TC = 25C			80	A
Maximum Diode forward current	IF	TC = 100C			40	A
Diode pulsed current	IFM	TC = 25C			160	A
Gate-Emitter voltage	VGE	TVJ = 25C			20	V
Transient Gate-Emitter Voltage		(tp 10s, D < 0.010) TVJ = 25C			30	V
Power Dissipation	Ptot	TC = 25C			417	W
Power Dissipation	Ptot	TC = 100C			208	W
Operating Junction Temperature Range	TVJ		-40		+175	C
Storage Temperature Range	TSTG		-55		+150	C
Thermal Resistance
Thermal resistance: junction - case IGBT	RJC	IGBT			0.36	C/W
Thermal resistance: junction - case Diode	RJC	Diode			0.45	C/W
Electrical Characteristics
Collector - Emitter Breakdown Voltage	V(BR)CES	VGE = 0V , IC = 0.5mA	1200	-	-	V
Collector - Emitter Saturation Voltage	VCESAT	VGE = 15V , IC = 40A ,TVJ = 25C	1.6	1.9	2.3	V
Collector - Emitter Saturation Voltage	VCESAT	VGE = 15V , IC = 40A ,TVJ = 175C	-	2.9	-	V
Diode forward voltage	VF	VGE = 0V , IC = 40A ,TVJ = 25C	-	2.5	-	V
Diode forward voltage	VF	VGE = 0V , IC = 40A ,TVJ = 175C	-	1.8	-	V
Gate-Emitter threshold voltage	VGE(th)	VGE = VCE, IC = 250mA	5.1	5.8	6.5	V
Zero Gate voltage Collector current	ICES	VCE = 650V , VGE = 0V	-	-	250.0	mA
Gate-Emitter leakage current	IGES	VGE = 20V , VCE = 0V	-	-	100	nA
Transconductance	gfs	VGE = 20V, IC = 40A	-	28	-	S
Dynamic Characteristics
Input Capacitance	Cies	VGE = 0V, VCE = 25V, f = 1MHz	-	5047	-	pF
Output Capacitance	Coes		-	161	-	pF
Reverse Transfer Capacitance	Cres		-	35	-	pF
Gate Charge	Qg	VGE = 0 to 15V VCE = 960V, IC = 40A	-	170	-	nC
Gate to Emitter charge	Qge		-	37.5	-	nC
Gate to Collector charge	Qgc		-	68	-	nC
Switching Characteristics
Turn-On Delay Time	td(on)	VGE = 15V, VCC = 600V IC=40A, RG(off) = 12	-	48	-	ns
Turn-On Rise Time	tr		-	50	-	ns
Turn-Off Delay Time	td(off)		-	195	-	ns
Turn-Off Fall Time	tf		-	100	-	ns
Turn-on energy	Eon		-	2.65	-	mJ
Turn-off energy	Eoff		-	1.6	-	mJ
Total switching energy	Ets		-	4.25	-	mJ
Diode Recovery Characteristics
Reverse recovery time	Trr	VR = 600 V, IF = 40 A, di/dt = 600 A/S	-	375	-	ns
Reverse recovery charge	Qrr		-	2.29	-	mC
Peak reverse recovery current	Irrm		-	15	-	A