IGBT HXY MOSFET RGS00TS65HRC11-HXY featuring low saturation voltage and low electromagnetic interference

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Product Description

Product Overview

The RGS00TS65HRC11 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C.

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Model: RGS00TS65HRC11
Origin: Shenzhen, China
Package: TO-247
Packing: 30PCS

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
VCE	Collector emitter voltage				650	V
IC	DC collector current(1)	TC = 25C			80	A
IC	DC collector current(1)	TC = 100C			50	A
ICM	Pulsed collector current	TC = 25C			200	A
IF	Maximum Diode forward current(1)	TC = 25C			80	A
IF	Maximum Diode forward current(1)	TC = 100C			50	A
IFM	Diode pulsed current	TC = 25C			200	A
VGE	Gate-Emitter voltage	TVJ = 25C			20	V
VGE	Transient Gate-Emitter Voltage	(tp 10s, D < 0.010), TVJ = 25C			30	V
Ptot	Power Dissipation	TC = 25C			250	W
Ptot	Power Dissipation	TC = 100C			129	W
TVJ	Operating Junction Temperature Range		-40		+175	C
TSTG	Storage Temperature Range		-55		+150	C
Electrical Characteristics
V(BR)CES	Collector - Emitter Breakdown Voltage	VGE = 0V , IC = 0.5mA	650	-	-	V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 50A		1.6	2.1	V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 50A ,TVJ = 125C		1.93	-	V
VCESAT	Collector - Emitter Saturation Voltage	VGE = 15V , IC = 50A ,TVJ = 175C		2.0	-	V
VF	Diode forward voltage	TVJ = 25 C, IF=40A		1.85		V
VF	Diode forward voltage	VGE = 0V , IC = 50A		1.85	-	V
VF	Diode forward voltage	VGE = 0V , IC = 50A ,TVJ = 125C		1.6	-	V
VF	Diode forward voltage	VGE = 0V , IC = 50A ,TVJ = 175C		1.45	-	V
VGE(th)	Gate-Emitter threshold voltage	VGE = VCE, IC = 250mA	3.2	4	4.8	V
ICES	Zero Gate voltage Collector current	VCE = 650V , VGE = 0V		-	50	mA
IGES	Gate-Emitter leakage current	VGE = 20V , VCE = 0V		-	100	nA
gfs	Transconductance	VGE = 20V, IC = 50A		56	-	S
Dynamic Characteristics
Cies	Input Capacitance	VGE = 0V, VCE = 25V, f = 1MHz		1916	-	pF
Coes	Output Capacitance			139	-	pF
Cres	Reverse Transfer Capacitance			13	-	pF
Qg	Gate Charge	VGE = 0 to 15V, VCE = 520V, IC = 50A		71	-	nC
Qge	Gate to Emitter charge			10	-	nC
Qgc	Gate to Collector charge			21	-	nC
Switching Characteristics
td(on)	Turn-On DelayTime	VGE = 15V, VCC = 400V, IC= 50A, RG(off) = 12,RG(on) = 12		17	-	ns
tr	Turn-On Rise Time			30	-	ns
td(off)	Turn-Off DelayTime			110	-	ns
tf	Turn-Off Fall Time			34	-	ns
Eon	Turn-on energy			1.35	-	mJ
Eoff	Turn-off energy			0.51	-	mJ
Ets	Total switching energy			1.86	-	mJ
Diode Recovery Characteristics
Trr	Reverse recovery time	VR = 400 V, IF = 50 A, di/dt = 400 A/S		56	-	ns
Qrr	Reverse recovery charge			0.27	-	mC
Irrm	Peak reverse recovery current			8	-	A
Thermal Resistance
RJA	Thermal resistance: junction - ambient				40	C/W
RJC	IGBT Thermal resistance: junction - case			0.65		C/W
RJC	Diode Thermal resistance: junction - case			0.58		C/W